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PDF NCEP01T18 Data sheet ( Hoja de datos )

Número de pieza NCEP01T18
Descripción N-Channel Super Trench Power MOSFET
Fabricantes NCE Power Semiconductor 
Logotipo NCE Power Semiconductor Logotipo



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No Preview Available ! NCEP01T18 Hoja de datos, Descripción, Manual

http://www.ncepower.com
Pb Free Product
NCEP01T18
NCE N-Channel Super Trench Power MOSFET
Description
The NCEP01T18 uses Super Trench technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an extremely
low combination of RDS(ON) and Qg. This device is ideal for
high-frequency switching and synchronous rectification.
General Features
VDS =100V,ID =180A
RDS(ON) <3.0m@ VGS=10V
Schematic diagram
Excellent gate charge x RDS(on) product(FOM)
Very low on-resistance RDS(on)
175 °C operating temperature
Pb-free lead plating
100% UIS tested
Marking and pin assignment
Application
DC/DC Converter
Ideal for high-frequency switching and synchronous
rectification
100% UIS TESTED!
100% Vds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCEP01T18
NCEP01T18
TO-220-3L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
100
±20
180
128
720
300
2
1000
-55 To 175
Unit
V
V
A
A
A
W
W/
mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0

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NCEP01T18 pdf
http://www.ncepower.com
Pb Free Product
NCEP01T18
Vds Drain-Source Voltage (V)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature()
Figure 9 Power De-rating
Vds Drain-Source Voltage (V)
Figure 8 Safe Operation Area
TJ-Junction Temperature()
Figure 10 Current De-rating
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
v1.0

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