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NCE60R360のメーカーはNCE Power Semiconductorです、この部品の機能は「N-Channel Super Junction Power MOSFET」です。 |
部品番号 | NCE60R360 |
| |
部品説明 | N-Channel Super Junction Power MOSFET | ||
メーカ | NCE Power Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとNCE60R360ダウンロード(pdfファイル)リンクがあります。 Total 10 pages
NCE60R360D,NCE60R360,NCE60R360F
N-Channel Super Junction Power MOSFET Ⅱ
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
Features
●New technology for high voltage device
●Low on-resistance and low conduction losses
●small package
●Ultra Low Gate Charge cause lower driving requirements
●100% Avalanche Tested
●ROHS compliant
TVDS@ jmax
RDS(ON)MAX
ID
650
360
11
V
mΩ
A
Application
● Power factor correction(PFC)
● Switched mode power supplies(SMPS)
● Uninterruptible Power Supply(UPS)
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE60R360D
TO-263
NCE60R360D
NCE60R360
TO-220
NCE60R360
NCE60R360F
TO-220F
NCE60R360F
TO-263
TO-220
TO-220F
Table 1. Absolute Maximum Ratings (TC=25℃)
Parameter
Symbol
Drain-Source Voltage (VGS=0V)
Gate-Source Voltage (VDS=0V)
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C
Pulsed drain current (Note 1)
Maximum Power Dissipation(Tc=25℃)
Derate above 25°C
Single pulse avalanche energy (Note2)
Avalanche current(Note 1)
Repetitive Avalanche energy ,tAR limited by Tjmax
(Note 1)
VDS
VGS
ID (DC)
ID (DC)
IDM (pluse)
PD
EAS
IAR
EAR
NCE60R360D
NCE60R360F
NCE60R360
600
±30
11 11*
7 7*
33 33*
121 32.7
0.97 0.26
280
5.5
0.5
Unit
V
V
A
A
A
W
W/°C
mJ
A
mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
http://www.ncepower.com
v1.0
1 Page NCE60R360D,NCE60R360,NCE60R360F
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves)
Figure1. Safe operating area
Figure2. Safe operating area for TO-220F
Figure3. Source-Drain Diode Forward Voltage
Figure4. Output characteristics
Figure5. Transfer characteristics
Figure6. Static drain-source on resistance
Wuxi NCE Power Semiconductor Co., Ltd
Page 3
http://www.ncepower.com
v1.0
3Pages NCE60R360D,NCE60R360,NCE60R360F
Test circuit
1)Gate charge test circuit & Waveform
2)Switch Time Test Circuit:
3)Unclamped Inductive Switching Test Circuit & Waveforms
Wuxi NCE Power Semiconductor Co., Ltd
Page 6
http://www.ncepower.com
v1.0
6 Page | |||
ページ | 合計 : 10 ページ | ||
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PDF ダウンロード | [ NCE60R360 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
NCE60R360 | N-Channel Super Junction Power MOSFET | NCE Power Semiconductor |
NCE60R360D | N-Channel Super Junction Power MOSFET | NCE Power Semiconductor |
NCE60R360F | N-Channel Super Junction Power MOSFET | NCE Power Semiconductor |