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PDF MBR20200CTR Data sheet ( Hoja de datos )
| Número de pieza | MBR20200CTR | |
| Descripción | 20 Ampere Heatsink Dual Common Anode Schottky Half Bridge Rectifiers | |
| Fabricantes | Thinki Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MBR20200CTR (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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MBR20100CTR thru MBR20200CTR
®
Pb Free Plating Product
MBR20100CTR/MBR20150CTR/MBR20200CTR
Pb
20 Ampere Heatsink Dual Common Anode Schottky Half Bridge Rectifiers
Features
HMBR matured technology with high reliablity
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Inverters and Solar Inverters
Plating Power Supply,SMPS,EPS and UPS
Car Audio Amplifiers and Sound Device Systems
TO-220AB
9.90±0.20
φ3.60±0.20
4.50±0.20
Unit:mm
1.30±0.20
1.27±0.20
1.52±0.20
2.40±0.20
Mechanical Data
Case: Heatsink TO-220CE package
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.0 gram approximately
2.54typ
2.54typ
0.80±0.20
0.50±0.20
Case
Negative
Common Anode
Suffix "CTR"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
SYMBOL MBR20100CTR MBR20150CTR MBR20200CTR UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak repetitive forward current
(Rated VR, Square wave, 20KHz)
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Peak repetitive reverse surge current (Note 1)
Maximum instantaneous forward voltage (Note 2)
IF= 10 A, TJ=25℃
IF= 10 A, TJ=125℃
IF= 20 A, TJ=25℃
IF= 20 A, TJ=125℃
Maximum reverse current @ rated VR
TJ=25 ℃
TJ=125 ℃
Voltage rate of change (Rated VR)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
VRRM
VRMS
VDC
IF(AV)
IFRM
IFSM
IRRM
VF
IR
dV/dt
RθJC
TJ
TSTG
100 150 200
70 105 140
100 150 200
20
20
150
1
0.5
0.85 0.88
0.75 0.75
0.95 0.97
0.85 0.85
5
2
10000
3.5
- 55 to +175
- 55 to +175
V
V
V
A
A
A
A
V
μA
mA
V/μs
℃/W
℃
℃
Rev.06
© 1995 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com.tw/
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MBR20200CTR.PDF ] | |
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