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PDF IRF60B217 Data sheet ( Hoja de datos )

Número de pieza IRF60B217
Descripción IR MOSFET
Fabricantes Infineon 
Logotipo Infineon Logotipo



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No Preview Available ! IRF60B217 Hoja de datos, Descripción, Manual

Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
 D
G
S
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free*
RoHS Compliant, Halogen-Free
G
Gate
IR MOSFET
StrongIRFET™
IRHEFXF6E0TB® P2o1we7r MOSFET
VDSS
RDS(on) typ.
max
ID
60V
7.3m
9.0m
60A
S
D
G
TO-220AB
IRF60B217
D
Drain
S
Source
Base part number
IRF60B217
Package Type
TO-220
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
IRF60B217
30
ID = 36A
25
20
15 TJ = 125°C
10
5 TJ = 25°C
0
4 8 12 16
VGS, Gate-to-Source Voltage (V)
20
Fig 1. Typical On-Resistance vs. Gate Voltage
1
60
50
40
30
20
10
0
25
50 75 100 125 150
TC , CaseTemperature (°C)
175
Fig 2. Maximum Drain Current vs. Case Temperature
2016– 01-05

1 page




IRF60B217 pdf
 
1000
100 TJ = 175°C
10
TJ = 25°C
1
0.1
0.2
VGS = 0V
0.4 0.6 0.8 1.0 1.2
VSD, Source-to-Drain Voltage (V)
Fig 9. Typical Source-Drain Diode Forward Voltage
75
Id = 1.0mA
70
65
IRF60B217
1000
100 100µsec
10 1msec
OPERATION IN THIS AREA
1 LIMITED BY RDS(on)
10msec
0.1 Tc = 25°C
Tj = 175°C
Single Pulse
0.01
0.1 1
DC
10
VDS, Drain-toSource Voltage (V)
Fig 10. Maximum Safe Operating Area
0.4
0.3
0.2
0.1
60
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 11. Drain-to-Source Breakdown Voltage
24.0
VGS = 6.0V
20.0
VGS = 7.0V
VGS = 8.0V
VGS = 10V
16.0
0.0
0
10 20 30 40 50
VDS, Drain-to-Source Voltage (V)
60
Fig 12. Typical Coss Stored Energy
12.0
8.0
4.0
0
40 80 120
ID, Drain Current (A)
160
Fig 13. Typical On-Resistance vs. Drain Current
5 2016– 01-05

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