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PDF GBJ3506 Data sheet ( Hoja de datos )
| Número de pieza | GBJ3506 | |
| Descripción | 35.0 AMPERE GLASS PASSIVATED FLAT BRIDGE RECTIFIERS | |
| Fabricantes | Thinki Semiconductor | |
| Logotipo |  |
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GBJ3506 thru GBJ3510
®
Pb Free Plating Product
GBJ3506 thru GBJ3510
Pb
35.0 AMPERE GLASS PASSIVATED FLAT BRIDGE RECTIFIERS
Features
• Glass passivated chip junction
• Low forward voltage drop
• High surge overload rating of 350 A peak
• Ideal for printed circuit board
Mechanical Data
• Case: Molded plastic,GBJ(5S/6KBJ)
• Epoxy: UL 94V-0 rate flame retardant
• Terminals: Leads solderable per JESD22-B102,
Meet JESD 201 class 2 whisker test
• Mounting position: Any
GBJ
Dimensions in inches and (millimeters)
1.193(30.3)
1.169(29.7)
HOLE FOR NO.
6 SCREW
.189(4.8)
.173(4.4)
.106(2.7)
.096(2.3)
.094(2.4)
.078(2.0)
.043(1.1)
.035(0.9)
+
~~-
.119
(0.5) .800(20.3)
.697(17.7) .441(11.2)
.425(10.8)
.114(2.9)
.165(4.2) .708(18.0) .098(2.5)
.150(3.8) .669(17.0)
.402(1.1)
.386(0.9)
.303(7.7)
.287(7.3)
.303(7.7)
.287(7.3)
.150(3.8)
.134(3.4)
.184(3.4)
.122(3.1)
.031(0.8)
.023(0.6)
Absolute Maximum Ratings and Characteristics
Ratings at 25 OC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or
inductive load. For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Rating for fusing (t<8.3ms)
Maximum instantaneous forward voltage (Note 1)
@ 17.5 A
Maximum reverse current @ rated VR
Typical thermal resistance (Note 2)
TJ=25°C
TJ=125°C
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: With idea heatsink
SYMBOL
VRRM
VRMS
VDC
IF(AV)
IFSM
I2t
VF
GBJ3506
600
420
600
IR
RθJC
TJ
TSTG
GBJ3508
800
560
800
35
350
508
1.1
10
500
0.6
- 55 to +150
- 55 to +150
GBJ3510
1000
700
1000
UNIT
V
V
V
A
A
A2s
V
μA
°C/W
°C
°C
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com/
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet GBJ3506.PDF ] | |
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