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Datasheet 1N5820 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 1N5820 | Schottky Barrier Rectifiers CREAT BY ART
3A, 20V - 40V Schottky Barrier Rectifiers
1N5820 - 1N5822
Taiwan Semiconductor
FEATURES
- Low forward voltage drop - Guardring for overvoltage protection - High surge current capability
- Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
- Halogen-free accord |  Taiwan Semiconductor | rectifier |
| 2 | 1N5820 | SCHOTTKY RECTIFIERS 1N5820-1N5822
High-reliability discrete products and engineering services since 1977
SCHOTTKY RECTIFIERS
FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and |  Digitron Semiconductors | rectifier |
| 3 | 1N5820 | SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20/ 30/ 40 VOLTS MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by 1N5820/D
Axial Lead Rectifiers
. . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide |  MotorolaInc | rectifier |
| 4 | 1N5820 | 3 AMPERE SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 40 Volts CURRENT - 3.0 Amperes) 1N5820 THRU 1N5822
3 AMPERE SCHOTTKY BARRIER RECTIFIER VOLTAGE - 20 to 40 Volts CURRENT - 3.0 Amperes
FEATURES l l High surge current capability Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing l l l Flame Retardant Epoxy Molding Compound High current operation |  Pan Jit International Inc. | rectifier |
| 5 | 1N5820 | 3 AMPERE SCHOTTKY BARRIER RECTIFIERS VOLTAGE - 20 to 40 Volts CURRENT - 3.0 Ampere |  Surge Components | rectifier |
1N5 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1N50 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | 1N50 | GOLD BONDED GERMANIUM DIODES New Jersey Semiconductor diode | | |
| 3 | 1N50 | N-CHANNEL POWER MOSFET 1N50
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
Power MOSFET
1.3A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state re  Unisonic Technologies mosfet | | |
| 4 | 1N50-KW | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
1N50-KW
Preliminary
1A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara Unisonic Technologies mosfet | | |
| 5 | 1N500 | Diode, Rectifier American Microsemiconductor diode | | |
| 6 | 1N5000 | Silicon Rectifiers Microsemi Corporation rectifier | | |
| 7 | 1N5000 | Diode Switching 400V 3A 2-Pin TOP HAT New Jersey Semiconductor diode | |
| Esta página es del resultado de búsqueda del 1N5820. Si pulsa el resultado de búsqueda de 1N5820 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
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