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PDF 1N5819 Data sheet ( Hoja de datos )
| Número de pieza | 1N5819 | |
| Descripción | SCHOTTKY BARRIER RECTIFIERS 1 AMPERE 20/ 30 and 40 VOLTS | |
| Fabricantes | MotorolaInc | |
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 1. Schottky Barrier Rectifier, 1A, 40V  Hay una vista previa y un enlace de descarga de 1N5819 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 1N5817/D
Axial Lead Rectifiers
. . . employing the Schottky Barrier principle in a large area metal–to–silicon
power diode. State–of–the–art geometry features chrome barrier metal,
epitaxial construction with oxide passivation and metal overlap contact. Ideally
suited for use as rectifiers in low–voltage, high–frequency inverters, free
wheeling diodes, and polarity protection diodes.
• Extremely Low vF
• Low Stored Charge, Majority Carrier Conduction
• Low Power Loss/High Efficiency
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 0.4 gram (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes: 220°C
Max. for 10 Seconds, 1/16″ from case
• Shipped in plastic bags, 1000 per bag.
• Available Tape and Reeled, 5000 per reel, by adding a “RL” suffix to the
part number
• Polarity: Cathode Indicated by Polarity Band
• Marking: 1N5817, 1N5818, 1N5819
1N5817
1N5818
1N5819
1N5817 and 1N5819 are
Motorola Preferred Devices
SCHOTTKY BARRIER
RECTIFIERS
1 AMPERE
20, 30 and 40 VOLTS
CASE 59–04
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Non–Repetitive Peak Reverse Voltage
RMS Reverse Voltage
Average Rectified Forward Current (2)
(VR(equiv) ≤ 0.2 VR(dc), TL = 90°C,
RθJA = 80°C/W, P.C. Board Mounting, see Note 2, TA = 55°C)
Ambient Temperature (Rated VR(dc), PF(AV) = 0, RθJA = 80°C/W)
Non–Repetitive Peak Surge Current
(Surge applied at rated load conditions, half–wave, single phase 60 Hz,
TL = 70°C)
Operating and Storage Junction Temperature Range (Reverse Voltage applied)
Peak Operating Junction Temperature (Forward Current applied)
THERMAL CHARACTERISTICS (2)
Characteristic
Thermal Resistance, Junction to Ambient
ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (2)
Characteristic
Maximum Instantaneous Forward Voltage (1)
(iF = 0.1 A)
(iF = 1.0 A)
(iF = 3.0 A)
Maximum Instantaneous Reverse Current @ Rated dc Voltage (1)
(TL = 25°C)
(TL = 100°C)
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.
(2) Lead Temperature reference is cathode lead 1/32″ from case.
Preferred devices are Motorola recommended choices for future use and best overall value.
Symbol
VRRM
VRWM
VR
VRSM
VR(RMS)
IO
TA
IFSM
TJ, Tstg
TJ(pk)
Symbol
RθJA
Symbol
vF
IR
1N5817 1N5818 1N5819
20 30 40
24 36 48
14 21 28
1.0
85 80 75
25 (for one cycle)
–65 to +125
150
Max
80
1N5817 1N5818 1N5819
0.32 0.33 0.34
0.45 0.55
0.6
0.75 0.875
0.9
1.0 1.0 1.0
10 10 10
Unit
V
V
V
A
°C
A
°C
°C
Unit
°C/W
Unit
V
mA
Rev 3
©RMeoctotriofilea,rInDce. 1v9ic96e Data
1
1 page  
NOTE 4 — HIGH FREQUENCY OPERATION
Since current flow in a Schottky rectifier is the result of majority carri-
er conduction, it is not subject to junction diode forward and reverse re-
covery transients due to minority carrier injection and stored charge.
Satisfactory circuit analysis work may be performed by using a model
consisting of an ideal diode in parallel with a variable capacitance. (See
Figure 10.)
Rectification efficiency measurements show that operation will be
satisfactory up to several megahertz. For example, relative waveform
rectification efficiency is approximately 70 percent at 2.0 MHz, e.g., the
ratio of dc power to RMS power in the load is 0.28 at this frequency,
whereas perfect rectification would yield 0.406 for sine wave inputs.
However, in contrast to ordinary junction diodes, the loss in waveform
efficiency is not indicative of power loss: it is simply a result of reverse
current flow through the diode capacitance, which lowers the dc output
voltage.
1N5817 1N5818 1N5819
200
100
70 1N5817
50 1N5818
1N5819
30
TJ = 25°C
20 f = 1.0 MHz
10
0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10
VR, REVERSE VOLTAGE (VOLTS)
20
Figure 10. Typical Capacitance
40
Rectifier Device Data
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 1N5819.PDF ] | |
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