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Número de pieza | AOI7S65 | |
Descripción | Power Transistor | |
Fabricantes | Alpha & Omega Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AOI7S65 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! AOD7S65/AOU7S65/AOI7S65
650V 7A α MOS TM Power Transistor
General Description
Product Summary
The AOD7S65 & AOU7S65 & AOI7S65 have been
fabricated using the advanced αMOSTM high voltage
process that is designed to deliver high levels of
performance and robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
VDS @ Tj,max
IDM
RDS(ON),max
Qg,typ
Eoss @ 400V
100% UIS Tested
100% Rg Tested
750V
30A
0.65Ω
9.2nC
2µJ
TO252
DPAK
Top View
Bottom View
D
D
TO251
Top View
Bottom View
Top View
TO251A
IPAK
Bottom View
D
S
G
AOD7S65
G
S
S
GD
AOU7S65
G
SD
S
D
G
AOI7S65
G
D
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy H
ID
IDM
IAR
EAR
EAS
TC=25°C
Power Dissipation B Derate above 25oC
PD
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
dv/dt
Junction and Storage Temperature Range
TJ, TSTG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds K
Thermal Characteristics
TL
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Maximum Junction-to-CaseD,F
Symbol
RθJA
RθCS
RθJC
Maximum
650
±30
7
5
30
1.7
43
86
89
0.7
100
20
-55 to 150
300
Typical
45
--
1.1
Maximum
55
0.5
1.4
S
Units
V
V
A
A
mJ
mJ
W
W/ oC
V/ns
°C
°C
Units
°C/W
°C/W
°C/W
Rev1: Nov 2012
www.aosmd.com
Page 1 of 7
1 page AOD7S65/AOU7S65/AOI7S65
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1 RθJC=1.4°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.000001
Single Pulse
PD
Ton
T
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance (Note F)
1
10
100
80
60
40
20
0
25 50 75 100 125 150 175
TCASE (°C)
Figure 14: Avalanche energy
8
6
4
2
0
0 25 50 75 100 125 150
TCASE (°C)
Figure 15: Current De-rating (Note B)
Rev1: Nov 2012
www.aosmd.com
Page 5 of 7
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet AOI7S65.PDF ] |
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