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PDF 1N5818 Data sheet ( Hoja de datos )

Número de pieza 1N5818
Descripción SCHOTTKY BARRIER RECTIFIER
Fabricantes Shanghai Lunsure Electronic Tech 
Logotipo Shanghai Lunsure Electronic Tech Logotipo

1N5818 datasheet


1. Fairchild ( Diode, Rectifier )






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No Preview Available ! 1N5818 Hoja de datos, Descripción, Manual

CE
CHENYI ELECTRONICS
1N5817 THRU 1N5819
SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 20 to 40 Volts
Forward Current - 1.0Ampere
FEATURES
. Plastic package has Underwriters Laboratory Flammability Classification 94-0
. Metal sliicon junction ,majority carriet conduction
. Guard ring for overcoltage protection
. Low power loss,high efficiency
. High current capability ,Low forward voltage drop
. High surge capability
. For use in low voltage ,high frequency inverters,
free wheeling , and polarilty protection applications
. High temperature soldering guaranteed: 250 /10 seconds at terminals,
. 375"(9.5mm)lead length,5lbs.(2.3kg)tension
MECHANICAL DATA
. Case: JEDEC MELG DO-41 molded plastic body
. Terminals: Plated axial leads,solderable per MIL-STD-750,method 2026
. Polarity: color band denotes cathode end
. Mounting Position: Any
. Weight: 0.012 ounce, 0.33 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25 ambient temperature unless otherwise specified,Single phase,half wave,resistive or inductive)
load. For capacitive load,derate by 20%)
Symbols
1N5817
1N5818
1N5819
Maximum repetitive peak reverse voltage
VRRM
20
30
40
Maximum RMS voltage
VRMS
14
21
28
Maximum DC blocking voltage
VDC
20
30
40
Maximum non-repetitive peak reverse voltage
VRSM
24
36
48
Macimum average forward rectified
current 0.375"(9.5mm)lead length at TL=90
I(AV)
1.0
Peak forward surge current 8.3ms singel half
sine-wave superimposed on rated load
IFSM
25.0
(JEDEC method) at TL=70 )
Maximum instantaneous forward voltage at 1.0 A(Note 1)
VF
0.450
0.550
0.600
Maximum instantaneous forward voltage at 3.1 A(Note 1)
Maximum instantaneous reverse
TA=25
current at rated DC blocking voltage(Note 1)
TA=100
Typeical junction capacitance(Note 3)
Typeical thermal resistance
(Note 2)
Operating junction and storage temperature range
VF
IR
CJ
R JA
R JL
TJ/TSTG
0.750
0.875
0.5
10.0
110.0
50.0
15.0
-65 to +125
0.900
Notes: 1. Pulse test: 300
s pulse width,1% duty cycle
2.Thermal resistance (from junction to ambient)Vertical P.C.B. Mounted, with 1.5X1.5"(38X38mm)copper pads
3.Measured at 1.0MHz and reverse voltage of 4.0 volts
Units
Volts
Volts
Volts
Volts
Amp
Amps
Volts
Volts
mA
pF
/W
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
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