DataSheet.es    


PDF 1N5817 Data sheet ( Hoja de datos )

Número de pieza 1N5817
Descripción 1.0A SCHOTTKY BARRIER RECTIFIER
Fabricantes Diodes Incorporated 
Logotipo Diodes Incorporated Logotipo



Hay una vista previa y un enlace de descarga de 1N5817 (archivo pdf) en la parte inferior de esta página.


Total 2 Páginas

No Preview Available ! 1N5817 Hoja de datos, Descripción, Manual

1N5817 - 1N5819
1.0A SCHOTTKY BARRIER RECTIFIER
Features
· Schottky Barrier Chip
· Guard Ring Die Construction for
Transient Protection
· Low Power Loss, High Efficiency
· High Surge Capability
· High Current Capability and Low Forward
Voltage Drop
· For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
· Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
· Case: Molded Plastic
· Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
· Polarity: Cathode Band
· Weight: 0.3 grams (approx)
· Mounting Position: Any
· Marking: Type Number
ABA
D
DO-41 Plastic
Dim Min Max
A 25.40 ¾
B 4.06 5.21
C 0.71 0.864
D 2.00 2.72
All Dimensions in mm
C
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
RMS Reverse Voltage
VR(RMS)
Average Rectified Output Current
(Note 1)
@ TL = 90°C
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
IO
IFSM
Forward Voltage (Note 2)
@ IF = 1.0A
@ IF = 3.0A
VFM
Peak Reverse Leakage Current
at Rated DC Blocking Voltage (Note 2)
@TA = 25°C
@ TA = 100°C
IRM
Typical Total Capacitance (Note 3)
CT
Typical Thermal Resistance Junction to Lead (Note 4)
RqJL
Typical Thermal Resistance Junction to Ambient
RqJA
Operating and Storage Temperature Range
Tj, TSTG
1N5817
20
14
0.450
0.750
1N5818
30
21
1.0
25
0.550
0.875
1.0
10
110
15
50
-65 to +125
1N5819
40
28
0.60
0.90
Unit
V
V
A
A
V
mA
pF
°C/W
°C
Notes:
1. Measured at ambient temperature at a distance of 9.5mm from the case.
2. Short duration test pulse used to minimize self-heating effect.
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
4. Thermal resistance from junction to lead vertical P.C.B. mounted, 0.375" (9.5mm) lead length with 1.5 x 1.5" (38 x 38mm)
copper pads.
DS23001 Rev. 6 - 2
1 of 2
www.diodes.com
1N5817-1N5819

1 page





PáginasTotal 2 Páginas
PDF Descargar[ Datasheet 1N5817.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
1N5810ULTRA FAST RECTIFIERSMicrosemi Corporation
Microsemi Corporation
1N5810Diode Switching 8A 2-Pin GPR-4AMNew Jersey Semiconductor
New Jersey Semiconductor
1N5810DIODEDSI
DSI
1N5810RECTIFIERSSolid State
Solid State

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar