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PDF H7N0307LS Data sheet ( Hoja de datos )
| Número de pieza | H7N0307LS | |
| Descripción | Silicon N Channel MOS FET High Speed Power Switching | |
| Fabricantes | Hitachi | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de H7N0307LS (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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H7N0307LD, H7N0307LS, H7N0307LM
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-1516D (Z)
5th. Edition
May 2002
Features
• Low on-resistance
RDS(on) =4.6 mΩ typ.
• Low drive current
• 4.5 V gate drive device can be driven from 5 V source
Outline
LDPAK
D
G
S
4 44
1
2
3
1
2
3
H7N0307LS
1
2
3
H7N0307LM
H7N0307LD
1. Gate
2. Drain
3. Source
4. Drain
1 page  
H7N0307LD, H7N0307LS, H7N0307LM
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.20
Pulse Test
0.16
0.12
0.08
0.04
0
I D = 10 A
5A
2A
4 8 12 16 20
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
20
10 VGS = 4.5 V
5
10 V
2
1
0.1 0.2 0.5 1 2 5 10 20 50 100
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Temperature
20
Pulse Test
16
I D = 2 A, 5 A, 10 A
12
V GS = 4.5 V
8
4
10 V
2 A, 5 A, 10 A
0
-40 0 40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
100
30 Tc = -25°C
10 75°C
25°C
3
1
0.3
0.1
0.1
V DS = 10 V
Pulse Test
0.3 1 3 10 30 100
Drain Current ID (A)
Rev.4, May 2002, page 5 of 11
5 Page 
• H7N0307LM
H7N0307LD, H7N0307LS, H7N0307LM
Unit: mm
10.2 ± 0.3
4.44 ± 0.2
1.3 ± 0.2
7.8
6.6
1.37 ± 0.2
1.3 ± 0.2
2.54 ± 0.5
0.86
+
–
0.2
0.1
2.54 ± 0.5
0.1
+
–
0.2
0.1
2.49 ± 0.2
0.4 ± 0.1
2.2
Hitachi Code
JEDEC
JEITA
Mass (reference value)
LDPAK (S)-(2)
—
—
1.35 g
Rev.4, May 2002, page 11 of 11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet H7N0307LS.PDF ] | |
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