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PDF BCW60C Data sheet ( Hoja de datos )
| Número de pieza | BCW60C | |
| Descripción | NPN TRANSISTOR | |
| Fabricantes | WEJ | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BCW60C (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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RoHS
BCW60C
SOT-23 Plastic-Encapsulate Transistors
BCW60C DFEATURES
TRANSISTOR (NPN)
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
TPower dissipation
.,LPCM: 0.25 W (Tamb=25℃)
Collector current
ICM: 0.1 A
OCollector-base voltage
V(BR)CBO:
32 V
COperating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
2. 4
1. 3
Unit: mm
ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
NParameter
Collector-base breakdown voltage
OCollector-emitter breakdown voltage
REmitter-base breakdown voltage
TCollector cut-off current
Collector cut-off current
ECDC current gain
ELCollector-emitter saturation voltage
JBase-emitter saturation voltage
EBase-emitter voltage
WTransition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE1
hFE2
hFE3
VCE(sat)
VBE(sat)
VBE
fT
Test conditions
Ic= 10µA, IE=0
Ic= 1mA, IB=0
IE=10µA, IC=0
VCB=32V, IE=0
VEB=4V, IC=0
VCE=5V, IC= 10µA
VCE=5V, IC= 2mA
VCE=5V, IC= 50mA
IC=10mA, IB=0.25mA
IC=50mA, IB=1.25mA
IC=10mA, IB=0.25mA
IC=50mA, IB=1.25mA
VCE=5V, IC= 2mA
VCE= 5V, IC=10mA, f=100MHz
MIN
32
32
5
40
250
100
0.55
100
MAX
0.02
0.02
UNIT
V
V
V
µA
µA
460
0.35 V
0.55 V
0.85 V
1.05 V
0.75 V
MHz
Output capacitance
Cob VCB= 10V, IE=0, f=1MHz
5 pF
Marking
AC
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