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PDF 2SD999 Data sheet ( Hoja de datos )
| Número de pieza | 2SD999 | |
| Descripción | NPN EPITAXIAL SILICON TRANSISTOR | |
| Fabricantes | WEJ | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SD999 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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RoHS
2SD999
2SD999 TRANSISTOR (NPN)
FEATURES
Power dissipation
DPCM: 0.5 W (Tamb=25℃)
TCollector current
ICM: 1 A
.,LCollector-base voltage
V(BR)CBO:
30 V
Operating and storage junction temperature range
OTJ, Tstg: -55℃ to +150℃
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
CELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
ICCollector-base breakdown voltage
Collector-emitter breakdown voltage
NEmitter-base breakdown voltage
OCollector cut-off current
REmitter cut-off current
TDC current gain
CCollector-emitter saturation voltage
EBase-emitter saturation voltage
LBase-emitter voltage
ETransition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE (sat)
VBE
fT
Cob
Test conditions
Ic=100µA, IE=0
Ic=1mA, IB=0
IE=100µA, IC=0
VCB=30V, IE=0
VEB=5V, IC=0
VCE=1V, IC=100mA
VCE=1V, IC=1A
IC=1A, IB=100mA
IC=1A, IB=100mA
VCE=6V, IC=10mA
VCE=6V, IC=10mA
VCB=6V, IE=0, f=1MHz
MIN TYP MAX UNIT
30 V
25 V
5V
0.1 µA
0.1 µA
90 400
50
0.4 V
1.2 V
0.6 0.7 V
130 MHz
22 pF
EJCLASSIFICATION OF hFE(1)
WRank
CM CL CK
Range
90-180
135-270
200-400
Marking
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SD999.PDF ] | |
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