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HCS65R360SのメーカーはSemiHowです、この部品の機能は「N-Channel Super Junction MOSFET」です。 |
部品番号 | HCS65R360S |
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部品説明 | N-Channel Super Junction MOSFET | ||
メーカ | SemiHow | ||
ロゴ | |||
このページの下部にプレビューとHCS65R360Sダウンロード(pdfファイル)リンクがあります。 Total 7 pages
HCS65R360S
650V N-Channel Super Junction MOSFET
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 23 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) ȍ7\S#9GS=10V
100% Avalanche Tested
November 2014
BVDSS = 650 V
RDS(on) typ = 0.32 ȍ
ID = 11 A
TO-220F
12
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Static
AC (f>1 Hz)
650
11 *
7*
33 *
ρ20
ρ30
EAS
IAR
EAR
dv/dt
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
300
3.0
0.6
15
PD
Power Dissipation (TC = 25)
- Derate above 25
31
0.25
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +150
300
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol
RșJC
RșJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
4.0
60.5
Units
V
A
A
A
V
V
mJ
A
mJ
V/ns
W
W
Units
/W
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1 Page Typical Characteristics
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
101 5.5 V
5.0 V
Bottom : 4.5 V
* Notes :
100
1. 300us Pulse Test
2. TC = 25oC
100 101
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
1.0
0.8
0.6 VGS = 10V
0.4
VGS = 20V
0.2
Note : TJ = 25oC
0.0
0 4 8 12 16 20 24
I , Drain Current [A]
D
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
6000
5000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
4000
Coss
3000
2000
1000
0
10-1
* Note ;
1. VGS = 0 V
Ciss 2. f = 1 MHz
Crss
100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
10
25oC
150oC
-25oC
* Notes :
1. VDS= 30V
2. 300us Pulse Test
0.1
2 V4GS, Gate-Sour6ce Voltage [V]8 10
Figure 2. Transfer Characteristics
10
1
150oC 25oC
0.1
0.0
* Notes :
1. VGS= 0V
2. 300us Pulse Test
0.2 0.4 0.6 0.8
VSD, Source-Drain Voltage [V]
1.0
1.2
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 130V
10 VDS = 325V
VDS = 520V
8
6
4
2
Note : ID = 11A
0
0 5 10 15 20 25
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
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3Pages Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• IS controlled by pulse period
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
D = --G--a--t-e--P--u--l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD
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6 Page | |||
ページ | 合計 : 7 ページ | ||
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HCS65R360S | N-Channel Super Junction MOSFET | SemiHow |