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HCS65R180S PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 HCS65R180S
部品説明 N-Channel Super Junction MOSFET
メーカ SemiHow
ロゴ SemiHow ロゴ 



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HCS65R180S Datasheet, HCS65R180S PDF,ピン配置, 機能
HCS65R180S
650V N-Channel Super Junction MOSFET
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 46 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) ȍ 7\S #9GS=10V
‰ 100% Avalanche Tested
March 2015
BVDSS = 650 V
RDS(on) typ = 0.15 ȍ
ID = 20 A
TO-220F
12
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Static
AC (f>1 Hz)
650
20 *
10 *
60 *
ρ20
ρ30
EAS
IAR
EAR
dv/dt
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
710
20
1
15
PD
Power Dissipation (TC = 25)
- Derate above 25
45
0.36
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +150
300
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol
RșJC
RșJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
2.8
60.5
Units
V
A
A
A
V
V
mJ
A
mJ
V/ns
W
W
Units
/W
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝;ΒΣΔΙ͑ͣͦ͑͢͡

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