DataSheet.jp

HCD7N70S の電気的特性と機能

HCD7N70SのメーカーはSemiHowです、この部品の機能は「700V N-Channel Super Junction MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 HCD7N70S
部品説明 700V N-Channel Super Junction MOSFET
メーカ SemiHow
ロゴ SemiHow ロゴ 




このページの下部にプレビューとHCD7N70Sダウンロード(pdfファイル)リンクがあります。
Total 7 pages

No Preview Available !

HCD7N70S Datasheet, HCD7N70S PDF,ピン配置, 機能
HCD7N70S
700V N-Channel Super Junction MOSFET
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 9 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) : 0.95 ȍ 7\S #9GS=10V
‰ 100% Avalanche Tested
June 2015
BVDSS = 700 V
RDS(on) typ ȍ
ID = 5.0 A
D-PAK
2
1
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
700
5.0
3.2
13.0
ρ20
40
1.2
0.1
50
PD
TJ, TSTG
TL
Power Dissipation (TC = 25)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
28
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
Thermal Resistance Characteristics
Symbol
Parameter
RșJC
Junction-to-Case
RșJA Junction-to-Ambient*
Soldering temperature, wave soldering
Tsold only allowed at leads
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
4.4
60.5
260
Units
/W
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳͤ͝ͻΦΟΖ͑ͣͦ͑͢͡

1 Page





HCD7N70S pdf, ピン配列
Typical Characteristics
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
* Notes :
1. 300us Pulse Test
2. T = 25oC
C
10-1
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
4
3
VGS = 10V
2
1 VGS = 20V
Note : TJ = 25oC
0
0 3 6 9 12
ID, Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
2400
1800
Ciss = Cgs + Cgd (Cds = shorted)
C =C +C
oss ds gd
Crss = Cgd
1200
600
10-1
Coss
* Note ;
1. V = 0 V
GS
Ciss 2. f = 1 MHz
Crss
100 101 102
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
10
25oC
150oC
-25oC
* Notes :
1. VDS= 20V
2. 300us Pulse Test
0.1
2 4 6 8 10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10
1
150oC
25oC
0.1
0.0
* Notes :
1. V = 0V
GS
2. 300us Pulse Test
0.2 0.4 0.6 0.8 1.0
V , Source-Drain Voltage [V]
SD
1.2
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10 VDS = 140V
VDS = 350V
8
V = 560V
DS
6
4
2
Note : ID = 2.3A
0
0 2 4 6 8 10
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳͤ͝ͻΦΟΖ͑ͣͦ͑͢͡


3Pages


HCD7N70S 電子部品, 半導体
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• IS controlled by pulse period
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
D = --G--a--t-e--P--u--l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳͤ͝ͻΦΟΖ͑ͣͦ͑͢͡

6 Page



ページ 合計 : 7 ページ
 
PDF
ダウンロード
[ HCD7N70S データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
HCD7N70S

700V N-Channel Super Junction MOSFET

SemiHow
SemiHow


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap