DataSheet.jp

HCD6N70S PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 HCD6N70S
部品説明 700V N-Channel Super Junction MOSFET
メーカ SemiHow
ロゴ SemiHow ロゴ 



Total 10 pages
		

No Preview Available !

HCD6N70S Datasheet, HCD6N70S PDF,ピン配置, 機能
June 2015
HCD6N70S / HCU6N70S
700V N-Channel Super Junction MOSFET
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 7 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) ȍ 7\S #9GS=10V
‰ 100% Avalanche Tested
BVDSS = 700 V
RDS(on) typ ȍ
ID = 3.0 A
D-PAK I-PAK
2
1
3
HCD6N70S
1
2
3
HCU6N70S
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
700
3.0
1.9
8.0
ρ20
25
0.9
0.1
50
Power Dissipation (TA = 25)*
PD Power Dissipation (TC = 25)
- Derate above 25
2.1
28
0.22
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/
Thermal Resistance Characteristics
Symbol
Parameter
RșJC
RșJA
Junction-to-Case
Junction-to-Ambient*
RșJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
4.4
50
110
Units
/W
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͢͝ͻΦΟΖ͑ͣͦ͑͢͡

1 Page





ページ 合計 : 10 ページ
PDF
ダウンロード
[ HCD6N70S.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
HCD6N70S

700V N-Channel Super Junction MOSFET

SemiHow
SemiHow

www.DataSheet.jp    |   2019   |  メール    |   最新    |   Sitemap