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HCD65R360S PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 HCD65R360S
部品説明 650V N-Channel Super Junction MOSFET
メーカ SemiHow
ロゴ SemiHow ロゴ 



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HCD65R360S Datasheet, HCD65R360S PDF,ピン配置, 機能
June 2015
HCD65R360S / HCU65R360S
650V N-Channel Super Junction MOSFET
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 23 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) ȍ 7\S #9GS=10V
‰ 100% Avalanche Tested
BVDSS = 650 V
RDS(on) typ ȍ
ID = 11 A
D-PAK I-PAK
2
1
1
32
3
HCD65R360S HCU65R360S
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
650
11
7
33
ρ20
300
3.0
0.6
15
Power Dissipation (TA = 25)*
PD Power Dissipation (TC = 25)
- Derate above 25
2.5
100
0.8
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/
Thermal Resistance Characteristics
Symbol
Parameter
RșJC
RșJA
Junction-to-Case
Junction-to-Ambient*
RșJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
1.5
50
110
Units
/W
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳͥ͑͝ͻΦΟΖ͑ͣͦ͑͢͡

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