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Datasheet C566C-GFS Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | C566C-GFS | 5mm Oval LED Cree® 5mm Oval LED C566C-RFS/GFS/BFS/AFS C566C-RFN/GFN/BFN/AFN
This oval LED is specifically designed for variable-message signs and passenger-information signs. The oval-shaped radiation pattern and high luminous intensity ensure that these devices are excellent for wide-fieldof-view outdoor appli |  CREE | led |
C56 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | C5604 | NPN Transistor, 2SC5604 DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5604
NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE AMPLIFIER 3-PIN LEAD-LESS MINIMOLD
FEATURES
• High-gain transistor for buffer amplifier : S21e2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • fT = 25 GHz “UHS0�  NEC data | | |
| 2 | C5609 | NPN Transistor, 2SC5609 Transistors
2SC5609
Silicon PNP epitaxial planer type
For general amplification Complementary to 2SA2021
I Features
• High foward current transfer ratio hFE • SSS-mini type package, allowing downsizing and thinning of the
equipment and automatic insertion through the tape packing
I Absolute Ma  Panasonic Semiconductor data | | |
| 3 | C5610 | NPN Transistor, 2SC5610 Ordering number:ENN6367
PNP/NPN Epitaxial Planar Silicon Transistors
2SA2022/2SC5610
DC/DC Converter Applications
Applications
· Relay drivers, lamp drivers, motor drivers, strobes.
Features
· Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltag  Sanyo Semicon Device data | | |
| 4 | C5611 | NPN Transistor, 2SC5611 w w w Ordering . D a t number:ENN6336 a S h e e t 4 U . c o m
PNP/NPN Epitaxial Planar Silicon Transistors
2SA2023/2SC5611
60V / 5A High-Speed Switching Applications
Applications
· Various inductance lamp drivers for electrical equipment. · Inverters, converters (strobes, flash, fluorescent lamp Sanyo Semicon Device data | | |
| 5 | C5612 | NPN Transistor, 2SC5612 2SC5612
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5612
HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV
l High Voltage l Low Saturation Voltage l High Speed
: VCBO = 2000 V : VCE (sat) = 3 V (Max.) : tf = 0.15µs (Typ.)
Unit: mm
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
Collector  Toshiba Semiconductor data | | |
| 6 | C5617 | NPN SILICON RF TRANSISTOR DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5617
NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD
FEATURES • NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz • S21e2 = 11.0 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz • 3-pin lead-less minimold package
ORDERI NEC transistor | | |
| 7 | C5622 | NPN Transistor, 2SC5622 Power Transistors
2SC5622
Silicon NPN triple diffusion mesa type
For horizontal deflection output
Unit: mm
15.5±0.5
(10.0)
φ 3.2±0.1 5˚
(4.5)
3.0±0.3 5˚
(2.0)
• High breakdown voltage: 1 500 V • High-speed switching • Wide area of safe operation (ASO)
26.5±0. Panasonic Semiconductor data | |
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