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PDF 2DB1714 Data sheet ( 特性 )

部品番号 2DB1714
部品説明 PNP SURFACE MOUNT TRANSISTOR
メーカ Diodes
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2DB1714 Datasheet, 2DB1714 PDF,ピン配置, 機能
2DB1714
LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR
Features
Mechanical Data
Epitaxial Planar Die Construction
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Complementary NPN Type (2DD2679) Available
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Case: SOT89-3L
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.072 grams (approximate)
COLLECTOR
2,4
3E
Top View
1
BASE
3
EMITTER
Device Schematic
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Symbol
VCBO
VCEO
VEBO
ICM
IC
C4 2 C
1B
TOP VIEW
Pin Out Configuration
Value
-30
-30
-6
-4
-2
Unit
V
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ TA = 25°C
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Power Dissipation (Note 4) @ TA = 25°C
Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C
Operating and Storage Temperature Range
Symbol
PD
RθJA
PD
RθJA
TJ, TSTG
Value
0.9
139
2
62.5
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(SAT)
hFE
Min
-30
-30
-6
270
Output Capacitance
Cobo
Typ
16
Max
-0.1
-0.1
-370
680
Unit
V
V
V
μA
μA
mV
pF
Current Gain-Bandwidth Product
fT
200
MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Device mounted on FR-4 PCB with 1 inch2 copper pad layout.
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle 2%.
Conditions
IC = -10μA, IE = 0
IC = -1mA, IB = 0
IE = -10μA, IC = 0
VCB = -30V, IE = 0
VEB = -6V, IC = 0
IC = -1.5A, IB = -75mA
VCE = -2V, IC = -200mA
VCB = -10V, IE = 0,
f = 1MHz
VCE = -2V, IC = -100mA,
f = 100MHz
2DB1714
Document number: DS31610 Rev. 2 - 2
1 of 4
www.diodes.com
December 2008
© Diodes Incorporated

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