DataSheet.jp

FB1A4M の電気的特性と機能

FB1A4MのメーカーはNECです、この部品の機能は「on-chip resistor NPN silicon epitaxial transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 FB1A4M
部品説明 on-chip resistor NPN silicon epitaxial transistor
メーカ NEC
ロゴ NEC ロゴ 




このページの下部にプレビューとFB1A4Mダウンロード(pdfファイル)リンクがあります。

Total 8 pages

No Preview Available !

FB1A4M Datasheet, FB1A4M PDF,ピン配置, 機能
DATA SHEET
COMPOUND TRANSISTOR
FB1 SERIES
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
FEATURES
• Up to 0.7 A current drive available
• On-chip bias resistor
• Low power consumption during drive
PACKAGE DRAWING (UNIT: mm)
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC Semiconductor
Devices” (Document No. C11531E) published by NEC Corporation
to know the specification of quality grade on the devices and its
recommended applications.
FB1 SERIES LISTS
Products
Marking
FB1A4A
FB1L2Q
FB1A3M
FB1F3P
FB1J3P
FB1L3N
FB1A4M
P30
P31
P32
P33
P36
P34
P35
R1 (K)
0.47
1.0
2.2
3.3
4.7
10
R2 (K)
10
4.7
1.0
10
10
10
10
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
30
V
Collector to emitter voltage
VCEO
25
V
Emitter to base voltage
VEBO
10
V
Collector current (DC)
IC(DC)
0.7
A
Collector current (Pulse)
IC(pulse) *
1.0
A
Base current (DC)
IB(DC)
20
mA
Total power dissipation
PT
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg 55 to +150
°C
* PW10 ms, duty cycle50 %
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16180EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
21090928

1 Page





FB1A4M pdf, ピン配列
FB1F3P
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Collector cutoff current
ICBO
DC current gain
hFE1 **
DC current gain
hFE2 **
DC current gain
hFE3 **
Low level output voltage
VOL **
Low level input voltage
VIL **
Input resistance
R1
E-to-B resistance
R2
** PW 350 µs, duty cycle 2 %
Conditions
VCB = 30 V, IE = 0
VCE = 2.0 V, IC = 0.1 A
VCE = 2.0 V, IC = 0.5 A
VCE = 2.0 V, IC = 0.7 A
VIN = 5.0 V, IC = 0.3 A
VCE = 5.0 V, IC = 100 µA
FB1J3P
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Collector cutoff current
ICBO
DC current gain
hFE1 **
DC current gain
hFE2 **
DC current gain
hFE3 **
Low level output voltage
VOL **
Low level input voltage
VIL **
Input resistance
R1
E-to-B resistance
R2
** PW 350 µs, duty cycle 2 %
Conditions
VCB = 30 V, IE = 0
VCE = 2.0 V, IC = 0.1 A
VCE = 2.0 V, IC = 0.5 A
VCE = 2.0 V, IC = 0.7 A
VIN = 5.0 V, IC = 0.2 A
VCE = 5.0 V, IC = 100 µA
FB1L3N
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Collector cutoff current
ICBO
DC current gain
hFE1 **
DC current gain
hFE2 **
DC current gain
hFE3 **
Low level output voltage
VOL **
Low level input voltage
VIL **
Input resistance
R1
E-to-B resistance
R2
** PW 350 µs, duty cycle 2 %
Conditions
VCB = 30 V, IE = 0
VCE = 2.0 V, IC = 0.1 A
VCE = 2.0 V, IC = 0.5 A
VCE = 2.0 V, IC = 0.7 A
VIN = 5.0 V, IC = 0.2 A
VCE = 5.0 V, IC = 100 µA
FB1 SERIES
MIN.
300
300
135
1.54
7
TYP.
MAX.
100
0.3
0.3
2.2 2.86
10 13
Unit
nA
V
V
k
k
MIN.
300
300
135
2.31
7
TYP.
600
700
600
0.14
0.6
3.3
10
MAX.
100
0.3
0.3
4.29
13
Unit
nA
V
V
k
k
MIN.
300
300
135
3.29
7
TYP.
MAX.
100
0.3
0.3
4.7 6.11
10 13
Unit
nA
V
V
k
k
Data Sheet D16180EJ1V0DS
3


3Pages


FB1A4M 電子部品, 半導体
FB1 SERIES
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, contact an NEC sales representative.
Surface MOUNTING TYPE
For details of the recommended soldering conditions, refer to the document Semiconductor Device Mounting
Technology Manual (C10535E).
Soldering Method
Soldering Conditions
Recommended
Condition Symbol
Infrared reflow
Package peak temperature: 230°C, Time: 30 sec. max. (at 210°C or higher),
Count: Once, Exposure limit: None *
IR30-00
VPS
Package peak temperature: 215°C, Time: 40 sec. max. (at 200°C or higher),
Count: Once, Exposure limit: None *
VP15-00
Partial heating
Pin temperature: 300°C max., Time: 10 sec. max. Exposure limit: None *
O
* After opening the dry pack, store it at 25°C or less and 65% RH or less for the allowable storage period.
Cautions 1. Do not use different soldering methods together (except for partial heating).
2. Prevent the resin surface temperature from being higher than the board temperature by 20°C or
more.
6 Data Sheet D16180EJ1V0DS

6 Page



ページ 合計 : 8 ページ
 
PDF
ダウンロード
[ FB1A4M データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
FB1A4A

on-chip resistor NPN silicon epitaxial transistor

NEC
NEC
FB1A4M

on-chip resistor NPN silicon epitaxial transistor

NEC
NEC


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap