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HU60N03 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 HU60N03
部品説明 30V N-Channel MOSFET
メーカ HAOLIN
ロゴ HAOLIN ロゴ 



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HU60N03 Datasheet, HU60N03 PDF,ピン配置, 機能
Nov 2009
HD60N03 / HU60N03
30V N-Channel MOSFET
BVDSS = 30 V
RDS(on) = 9mΩ
ID = 60 A
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 18.5 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 9mΩ (Typ.) @V GS=10V
100% Avalanche Tested
TO-252 TO-251
HD60N03
HU60N03
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
Continuous (TC = 25)
Continuous (TC = 100)
Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
30
60
36.6
220
±20
230
60
11
7.0
PD
TJ, TSTG
TL
Power Dissipation (TA = 25)*
Power Dissipation (TC = 25)
- Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
2.0
100
0.7
-55 to +150
300
Thermal Resistance Characteristics
Symbol
Parameter
RθJC
Junction-to-Case
RθJA
Junction-to-Ambient*
RθJA
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
1.0
40
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/
Units
/W

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HU60N03

30V N-Channel MOSFET

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