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F21NM60N の電気的特性と機能

F21NM60NのメーカーはSTMicroelectronicsです、この部品の機能は「STF21NM60N」です。


製品の詳細 ( Datasheet PDF )

部品番号 F21NM60N
部品説明 STF21NM60N
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




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F21NM60N Datasheet, F21NM60N PDF,ピン配置, 機能
STP21NM60N-F21NM60N-STW21NM60N
STB21NM60N-STB21NM60N-1
N-channel 600 V - 0.17 - 17 A TO-220 - TO-220FP - D2PAK -
I2PAK - TO-247 second generation MDmesh™ Power MOSFET
Features
Type
VDSS
(@Tjmax)
RDS(on)
max
ID
STB21NM60N
)STB21NM60N-1
t(sSTF21NM60N
cSTP21NM60N
uSTW21NM60N
650 V
650 V
650 V
650 V
650 V
< 0.22
< 0.22
< 0.22
< 0.22
< 0.22
17 A
17 A
17 A(1)
17 A
17 A
rod1. Limited by maximum temperature allowed
P100% avalanche tested
teLow input capacitance and gate charge
leLow gate input resistance
bsoApplication
- OSwitching applications
t(s)Description
ucThis series of devices implements the second
dgeneration of MDmesh™ technology. This
rorevolutionary Power MOSFET associates a new
Pvertical structure to the company’s strip layout to
teyield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
Obsoledemanding high efficiency converters.
3
2
1
TO-220
3
2
1
TO-220FP
3
1
D2PAK
123
I2PAK
3
2
1
TO-247
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
Package
Packaging
STB21NM60N
STB21NM60N-1
B21NM60N
B21NM60N
D2PAK
I2PAK
Tape and reel
Tube
STF21NM60N
F21NM60N
TO-220FP
Tube
STP21NM60N
P21NM60N
TO-220
Tube
STW21NM60N
W21NM60N
TO-247
Tube
February 2008
Rev 7
1/18
www.st.com
18

1 Page





F21NM60N pdf, ピン配列
STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
TO-220/D2PAK
I2PAK / TO-247
TO-220FP
Unit
VDS Drain-source voltage (VGS = 0)
600 V
VGS Gate- source voltage
±25 V
ID
t(s)ID
cIDM (2)
uPTOT
roddv/dt(3)
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
te PVISO
oleTstg
bsTj
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s; TC = 25 °C)
Storage temperature
Max. operating junction temperature
O1. Limited only by maximum temperature allowed
-2. Pulse width limited by safe operating area
t(s)3. ISD 17 A, di/dt 480 A/µs, VDD = 80% V(BR)DSS
17
10
68
140
15
17(1)
10(1)
68(1)
30
-- 2500
–55 to 150
150
A
A
A
W
V/ns
V
°C
°C
ucTable 3. Thermal data
rodSymbol
Parameter
TO-220 D²PAK I²PAK TO-220FP TO-247 Unit
te PRthj-case
Thermal resistance junction-
case max
ole Rthj-pcb
Thermal resistance junction-
pcb max
Obs Rthj-amb
Thermal resistance junction-
ambient max
0.89
-- 30
62.5 --
4.21
-- --
62.5
0.89 °C/W
-- °C/W
50 °C/W
Tl
Maximum lead temperature
for soldering purpose
300
°C
Table 4. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
IAS (pulse width limited by Tj max)
Single pulse avalanche energy
EAS (starting Tj = 25 °C, ID = IAS, VDD = 50 V)
Max value
8.5
610
Unit
A
mJ
3/18


3Pages


F21NM60N 電子部品, 半導体
Electrical characteristics
STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for TO-220 /
D²PAK / I²PAK
Figure 3. Thermal impedance for TO-220 /
D²PAK / I²PAK
roduct(s)Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP
Obsolete Product(s) - Obsolete PFigure 6. Safe operating area for TO-247
Figure 7. Thermal impedance for TO-247
6/18

6 Page



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部品番号部品説明メーカ
F21NM60N

STF21NM60N

STMicroelectronics
STMicroelectronics


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