(PDF) 2SK1161 Datasheet - Silicon N Channel MOS FET

Número de pieza	2SK1161
Descripción	Silicon N Channel MOS FET
Fabricantes	Renesas
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No Preview Available ! 2SK1161, 2SK1162 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 1 2 3 REJ03G0912-0200 (Previous: ADE-208-1250) Rev.2.00 Sep 07, 2005 D G 1. Gate 2. Drain (Flange) 3. Source S Rev.2.00 Sep 07, 2005 page 1 of 6 1 page 2SK1161, 2SK1162 Reverse Drain Current vs. Source to Drain Voltage 20 Pulse Test 16 12 8 4 5, 10 V VGS = 0, –10 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) 3 1.0 D = 1 0.5 Normalized Transient Thermal Impedance vs. Pulse Width TC = 25°C 0.3 0.2 0.1 0.1 0.05 0.02 0.03 0.01 0.01 1 Shot Pulse 10 µ 100 µ θch–c (t) = γS (t) • θch–c θch–c = 1.25°C/W, TC = 25°C PDM PW T D = PW T 1m 10 m 100 m Pulse Width PW (S) 1 10 Switching Time Test Circuit Vin Monitor D.U.T Vout Monitor RL Vin = 10 V 50 Ω VDD .=. 30 V Waveforms 90 % Vin 10 % Vout 10 % 10 % td (on) 90 % 90 % tr td (off) tf Rev.2.00 Sep 07, 2005 page 5 of 6 5 Page

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PDF 2SK1161 Data sheet ( Hoja de datos )