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PDF IRFH7190PBF Data sheet ( Hoja de datos )
| Número de pieza | IRFH7190PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
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FastIRFET™
IRFH7190PbF
VDSS
RDS(on) max
(@ VGS = 10V)
Qg (typical)
Rg (typical)
ID
(@TC (Bottom) = 25°C)
100
7.5
26
1.0
82
V
m
nC
A
HEXFET® Power MOSFET
PQFN 5X6 mm
Applications
Optimized for Secondary Side Synchronous Rectification
Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies
Hot Swap and Active O-Ring
BLDC Motor Drive
Features
Low RDS(ON) (< 7.5m)
Internal Snubber
Low Thermal Resistance to PCB (<1.2°C/W)
100% Rg Tested
Low Profile (<1.05 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1
Benefits
Lower Conduction Losses
Reduced Vds Spike, Improved EMI
Increased Power Density
Increased Reliability
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
IRFH7190PbF
Package Type
PQFN 5mm x 6 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH7190TRPbF
Absolute Maximum Ratings
Parameter
VGS
ID @ TA = 25°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Max.
± 20
15
82
52
245
3.6
104
0.03
-55 to + 150
Units
V
A
W
W/°C
°C
Notes through are on page 9
1 www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
January 13, 2015
1 page  
1000
100
IRFH7190PbF
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart =25°C (Single Pulse)
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 125°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
Fig 12. Typical Avalanche Current vs. Pulse Width
1.0E-02
23
ID = 49A
20
17
14
TJ = 125°C
11
8
5 TJ = 25°C
2
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 13. On–Resistance vs. Gate Voltage
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
25
ID
TOP
3A
5A
BOTTOM 48A
50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
5 www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
January 13, 2015
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRFH7190PBF.PDF ] | |
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