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IRFH4234PBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IRFH4234PBF |
| |
部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRFH4234PBFダウンロード(pdfファイル)リンクがあります。 Total 9 pages
VDSS
RDS(on) max
(@ VGS = 10V)
(@ VGS = 4.5V)
Qg (typical)
ID
(@TC (Bottom) = 25°C)
25
4.6
7.3
8.2
60
V
m
nC
A
Applications
Control MOSFET for Sync Buck Converters
Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters
FastIRFET™
IRFH4234PbF
HEXFET® Power MOSFET
PQFN 5X6 mm
Features
Low Charge (typical 8.2 nC)
Low RDSon (<4.6 m)
Low Thermal Resistance to PCB (<4.6 °C/W)
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
Benefits
Low Switching Losses
Lower Conduction Losses
Enable better Thermal Dissipation
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
Package Type
IRFH4234PbF
PQFN 5mm x 6 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH4234TRPbF
Absolute Maximum Ratings
VGS
ID @ TA = 25°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
TJ
TSTG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
± 20
22
60
38
240
3.5
27
0.028
-55 to + 150
Units
V
A
W
W/°C
°C
Notes through are on page 9
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Submit Datasheet Feedback
March 16, 2015
1 Page 1000
100
10
TOP
BOTTOM
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.25V
3.0V
2.75V
1000
100
IRFH4234PbF
TOP
BOTTOM
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.25V
3.0V
2.75V
1
0.1
0.1
2.75V
60µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
10 TJ = 150°C
TJ = 25°C
1.0
1.0
VDS = 10V
60µs PULSE WIDTH
2.0 3.0 4.0 5.0 6.0
VGS, Gate-to-Source Voltage (V)
7.0
10
1
0.1
2.75V
60µs PULSE WIDTH
Tj = 150°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
2.0
ID = 30A
1.8 VGS = 10V
1.6
1.4
1.2
1.0
0.8
0.6
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1000
100
Ciss
Coss
Crss
Fig 4. Normalized On-Resistance vs. Temperature
14.0
12.0
ID= 30A
10.0
8.0
6.0
VDS= 20V
VDS= 13V
VDS= 5.0V
4.0
2.0
10
1
10
VDS, Drain-to-Source Voltage (V)
100
0.0
0
2 4 6 8 10 12 14 16 18
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3 www.irf.com © 2015 International Rectifier
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Submit Datasheet Feedback
March 16, 2015
3Pages IRFH4234PbF
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V(BR)DSS
15V tp
VDS
L
DRIVER
RG
20V
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 16a. Unclamped Inductive Test Circuit
I AS
Fig 16b. Unclamped Inductive Waveforms
Fig 17a. Switching Time Test Circuit
VDD
Fig 18. Gate Charge Test Circuit
6 www.irf.com © 2015 International Rectifier
Fig 17b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 19. Gate Charge Waveform
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March 16, 2015
6 Page | |||
ページ | 合計 : 9 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRFH4234PBF | Power MOSFET ( Transistor ) | International Rectifier |