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IRFH4226PBF の電気的特性と機能

IRFH4226PBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFH4226PBF
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFH4226PBF Datasheet, IRFH4226PBF PDF,ピン配置, 機能
VDSS
RDS(on) max
(@ VGS = 10V)
(@ VGS = 4.5V)
Qg (typical)
ID
(@TC (Bottom) = 25°C)
25
2.4
3.3
16
70
V
m
nC
A
 
Applications
Control MOSFET for Sync Buck Converters
Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters
FastIRFET™
IRFH4226PbF
HEXFET® Power MOSFET
 
PQFN 5X6 mm
Features
Low Charge (typical 16 nC)
Low RDSon (<2.4 m)
Low Thermal Resistance to PCB (<2.7 °C/W)
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
Benefits
Low Switching Losses
Lower Conduction Losses
Enable better Thermal Dissipation
results in Increased Power Density
 Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number  
IRFH4226PbF
Package Type  
PQFN 5mm x 6 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH4226TRPbF
Absolute Maximum Ratings
VGS
ID @ TA = 25°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
TJ
TSTG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
(Source Bonding Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
 
Max.
± 20
30
110
69
70
460
3.4
46
0.027
-55 to + 150
 
Units
V
A 
W
W/°C
°C
Notes through are on page 9
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IRFH4226PBF pdf, ピン配列
 
1000
100
TOP
BOTTOM
VGS
10V
5.5V
4.5V
4.0V
3.5V
3.25V
3.0V
2.75V
1000
100
IRFH4226PbF
TOP
BOTTOM
VGS
10V
5.5V
4.5V
4.0V
3.5V
3.25V
3.0V
2.75V
10
1
0.1
2.75V
60µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
TJ = 150°C
10
2.75V
10
1
0.1
60µs PULSE WIDTH
Tj = 150°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1.8
ID = 30A
1.6 VGS = 10V
1.4
1.2
1
0.1
1.0
TJ = 25°C
VDS = 10V
60µs PULSE WIDTH
2.0 3.0 4.0 5.0 6.0
VGS, Gate-to-Source Voltage (V)
7.0
1.0
0.8
0.6
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1000
Ciss
Coss
Crss
Fig 4. Normalized On-Resistance vs. Temperature
14.0
12.0
10.0
8.0
ID= 30A
VDS= 20V
VDS= 13V
VDS= 5.0V
6.0
4.0
2.0
100
0.1
1 10
VDS, Drain-to-Source Voltage (V)
100
0.0
0
5 10 15 20 25 30 35 40
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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March 11, 2015


3Pages


IRFH4226PBF 電子部品, 半導体
  IRFH4226PbF
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V(BR)DSS
15V tp
VDS
L
DRIVER
RG
20V
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 16a. Unclamped Inductive Test Circuit
I AS
Fig 16b. Unclamped Inductive Waveforms
Fig 17a. Switching Time Test Circuit
VDD 
Fig 17b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Fig 18. Gate Charge Test Circuit
6 www.irf.com © 2015 International Rectifier
Qgs1 Qgs2 Qgd
Qgodr
Fig 19. Gate Charge Waveform
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March 11, 2015

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部品番号部品説明メーカ
IRFH4226PBF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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