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Número de pieza | IRFH4209DPBF | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | International Rectifier | |
Logotipo | ||
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RDS(on) max
(@ VGS = 10V)
(@ VGS = 4.5V)
Qg (typical)
ID
(@TC (Bottom) = 25°C)
25
1.10
1.35
36
100
V
m
nC
A
Applications
Synchronous Rectifier MOSFET for Synchronous Buck Converters
FastIRFET™
IRFH4209DPbF
HEXFET® Power MOSFET
PQFN 5X6 mm
Features
Low RDS(ON) (<1.10 m)
Schottky Intrinsic Diode with Low Forward Voltage
Low Thermal Resistance to PCB (<1.0°C/W)
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
Benefits
Lower Conduction Losses
Lower Switching Losses
Enable better thermal dissipation
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
Package Type
IRFH4209DPbF
PQFN 5mm x 6 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH4209DTRPbF
Absolute Maximum Ratings
VGS
ID @ TA = 25°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC(Bottom) = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
TJ
TSTG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
(Source Bonding Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
± 20
44
260
165
100
400
3.5
125
0.028
-55 to + 150
Units
V
A
W
W/°C
°C
Notes through are on page 9
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Submit Datasheet Feedback
March 16, 2015
1 page 3.0
2.5
2.0
1.5
1.0
ID = 50A
TJ = 125°C
TJ = 25°C
1200
1000
800
600
400
200
IRFH4209DPbF
ID
TOP
13A
24A
BOTTOM 50A
0.5
2
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
0
25
50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy vs. Drain Current
1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
100 Tstart =25°C (Single Pulse)
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 125°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
tav (sec)
1.0E-02
Fig 14. Typical Avalanche Current vs. Pulse Width
1.0E-01
5 www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
March 16, 2015
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet IRFH4209DPBF.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRFH4209DPBF | Power MOSFET ( Transistor ) | International Rectifier |
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