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PDF SXE1089Z Data sheet ( Hoja de datos )
| Número de pieza | SXE1089Z | |
| Descripción | high performance pHEMT MMIC amplifier | |
| Fabricantes | RF Micro Devices | |
| Logotipo |  |
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SXE1089Z
0.05GHz to
3GHz, Cascad-
able pHEMT
MMIC Ampli-
fier
SXE1089Z
0.05GHz to 3GHz, CASCADABLE pHEMT
MMIC AMPLIFIER
Package: SOT-89
Product Description
RFMD’s SXE1089Z is a high performance pHEMT MMIC amplifier utilizing
a patented self-bias Darlington topology housed in a lowcost, surface
mountable SOT-89 package. The active bias network provides stable cur-
rent over temperature and process thereshold voltage variations.
Designed to run directly from a 5V supply, the SXE1089Z does not require
a dropping resistor as compared to typical Darlington amplifiers. The
SXE1089Z product is designed for high linearity 5V gain block applica-
tions that require small size and minimal external com-
Optimum Technology ponents. It is internally matched to 50.
Matching® Applied
GaAs HBT
GaAs MESFET
Gain and Return Loss
T = 25°C
20.0
InGaP HBT
S21
SiGe BiCMOS
Si BiCMOS
10.0
Note: Measured with Bias tees and deembedded to lead of device
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
0.0
-10.0
S22
-20.0
S11
-30.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Frequency (GHz)
Features
Excellent ACP -65dBc with 9.5dBm
Channel Power at 2140MHz
OIP3=38.5dBm at 2140MHz
P1dB=22.6dBm at 2140MHz
Gain=11.7dB at 1960MHz
NF=3.2dB at 1960MHz
Single-Supply Operation:5V at
IDQ = 128 mA
Broadband Internal Matching, No
Dropping Resistor
Patented Self-Bias Darlington
Topology
Consistent Current versus Temper-
ature
Insensitive to Process Threshold
Voltage Variation
Applications
PA Driver Amplifier, Multi-Carrier
Applications
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Small Signal Gain
14.2 dB 880MHz
11.7
dB 1960MHz
9.6 11.1
12.6
dB
2140 MHz
Output Power at 1dB Compression
22.4
dBm
880 MHz
22.9
dBm
1960 MHz
20.7
22.2
dBm
2140 MHz
Output Third Order Intercept Point
38.0
dBm
880MHz, 5dBm per tone, 1MHz spacing,
38.5
dBm 1960MHz, 5dBm per tone, 1MHz spacing,
36.6
38.6
dBm 2140MHz, 5dBm per tone, 1MHz spacing,
IS-95 Channel Power
13.2
dBm 880MHz, -65dBc ACP, tested with 9 Channels
FWD
17.0 dBm 880MHz, -45dBc ACP
WCDMA Channel Power 9.5 dBm 2140MHz, -65dBc ACP, tested with 64 Channels
FWD
14.5
dBm 2140MHz, -45dBc ACP
Input Return Loss
16.0
20.0
dB 2140MHz
Output Return Loss
11.7
15.7
dB 2140MHz
Noise Figure
3.2
4.2 dB
2140 MHz
Device Operating Voltage
5.0
V
Device Operating Current
118 128
138 mA
Thermal Resistance
45.0
°C/W
junction - lead
Test Conditions: VD=5V, IDQ=128mA Typ. , TL=25°C, ZS=ZL=50, Tested with Broadband Application Circuit
DS110610
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
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1 page  
SXE1089Z
S-Parameters over Temperature (With Broadband Application Circuit)
0.0
-5.0
-10.0
-15.0
-20.0
-25.0
S11 over Temperature
25°C
-40°C
85°C
18.0
16.0
14.0
12.0
10.0
-30.0
0.5
0.0
1.0 1.5 2.0 2.5
Frequency (GHz)
S12 over Temperature
3.0
8.0
0.5
0.0
-5.0 -5.0
-10.0
-10.0
-15.0
-15.0
-20.0
-25.0
-30.0
0.5
25C
-40C
85C
1.0 1.5 2.0 2.5
Frequency (GHz)
3.0
-20.0
-25.0
-30.0
0.5
S21 over Temperature
25°C
-40°C
85°C
1.0 1.5 2.0 2.5
Frequency (GHz)
S22 over Temperature
3.0
25C
-40C
85C
1.0 1.5 2.0 2.5
Frequency (GHz)
3.0
DS110610
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 10
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SXE1089Z.PDF ] | |
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