SXB2089Z Datasheet PDF - RF Micro Devices
| Part Number | SXB2089Z | |
| Description | MEDIUM POWER HBT AMPLIFIER | |
| Manufacturers | RF Micro Devices | |
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SXB2089Z
5MHz to
2500 MHz
Medium Power
InGaP/GaAs
HBT Amplifier
SXB2089Z
5MHz to 2500MHz MEDIUM POWER
InGaP/GaAs HBT AMPLIFIER
Package: SOT-89
Product Description
RFMD’s SXB2089Z amplifier is a high linearity InGaP/GaAs Heterojunc-
tion Bipolar Transistor (HBT) MMIC housed in a low-cost, surface-mount-
able plastic package. These amplifiers are specially designed for use as
driver devices for infrastructure equipment in the 5MHz to 2500MHz Cel-
lular, ISM, WLL, PCS, and W-CDMA applications. It’s high linearity makes it
an ideal choice for multi-carrier as well as digital applications.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Typical IP3, P1dB, Gain
50
45 IP3 IP3 IP3
40
35
30
25 P1dB Gain P1dB
P1dB
20
Gain
Gain
15
10
5
0
880 MHz
1960 MHz
2140 MHz
Features
High OIP3:+43dBm at
1960 MHz
P1dB:24dBm
High Linearity/ACP Perfor-
mance
Robust 2000V ESD, Class 2
SOT-89 Package
Applications
PA Driver Amplifier
IF Amplifier
Cellular, PCS, ISM, WLL,
W - CDMA
Parameter
Specification
Min. Typ.
Small Signal Gain
Input VSWR
Output Power at 1dB Compression
Third Order Intercept Point
Noise Figure
Channel Power IS-95
Thermal Resistance
Device Operating Current
21.5
15.5
23.0
38.0
40.0
120
25.0
23.0
17.0
17.0
1.1
1.4
1.6
1.3
24.0
24.5
24.5
40.0
41.0
43.0
43.0
4.9
4.5
4.7
4.2
16.0
16.3
15.5
15.6
51.3
135
Test Conditions: TA=25°C, Z0=50POUT per tone=+11dBm, ToneSpacing=1MHz
Max.
24.5
21.5
2.5
6.0
150
Unit
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
dB
dB
dBm
dBm
dBm
dBm
°C/W
mA
Condition
450 MHz
880 MHz
1960 MHz
2140 MHz
450 MHz
880 MHz
1960 MHz
2140 MHz
450 MHz
880MHz and 1960MHz
2140 MHz
450 MHz
880 MHZ
1960 MHz
2140 MHz
450 MHz
880 MHz
1960 MHz
2140 MHz
450MHz, IS-95, -55dBc ACP
880MHz, IS-95, -55dBc ACP
1960MHz, IS-95, -55dBc ACP
2140MHz, WCDMA, -50dBc ACP
junction - lead
VS=8v, RBIAS=20, VDEVICE=5.2V
DS110610
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
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SXB2089Z
Pin
1
2, 4
3
Function
RF IN
GND
RF OUT/BIAS
Description
RF input pin. This pin requires the use of an external DC blocking capacitor and matching components chosen
for the frequency of operation.
Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as
possible.
RF output pin. This pin requires the use of an external DC blocking capacitor, choke, and matching components
as shown in the Application Schematic.
Suggested Pad Layout
[]
Package Drawing
DS110610
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for SXB2089Z electronic component. |
| Information | Total 8 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ SXB2089Z.PDF Datasheet ] | |
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