|
|
PDF SGB2433Z Data sheet ( Hoja de datos )
| Número de pieza | SGB2433Z | |
| Descripción | DC to 4GHZ ACTIVE BIAS GAIN BLOCK | |
| Fabricantes | RF Micro Devices | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de SGB2433Z (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
SGB2433ZSGB2433Z
DC to 4GHZ ACTIVE BIAS GAIN BLOCK
RFMD Green, RoHS Compliant, Pb-Free (Z Part Number)
Package: 3x3 QFN, 16-Pin
Product Description
RFMD’s SGB2433Zis a high performance SiGe HBT MMIC amplifier utilizing a Dar-
lington configuration with an active bias network. The active bias network provides
stable current over temperature and process Beta variations. Designed to run
directly from a 3Vto5V supply the SGB2433Z does not require a drop resistor as
compared to typical Darlington amplifiers. This robust amplifier features a Class 1C
ESD rating, low thermal resistance, and unconditional stability. The SGB2433Z
product is designed for high linearity 3V gain block applications that require small
size and minimal external components. It is on chip matched to 50 and an exter-
nal bias inductor choke is required for the application band.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
NC
NC
RFIN
NC
Active
Bias
NC
NC
RFOUT
NC
Features
High Reliability SiGe HBT
Technology
Robust Class 1C ESD
Simple and Small Size
P1dB=6.9dBm at 1950MHz
IP3=18.0dBm at 1950MHz
Low Thermal
Resistance = 221 C/W
Applications
3V Battery Operated Applica-
tions
LO Buffer Amp
RF Pre-Driver and RF Receive
Path
Parameter
Specification
Min. Typ.
Small Signal Gain
19.1
15.7
17.2
16.2
Output Power at 1dB Compression
7.7
5.4 6.9
6.2
Output Third Order Intercept Point
19.5
16.0
18.0
18.0
Noise Figure
3.5
Frequency of Operation
DC
Current, IC
Input Return Loss
21.0
10.0
25.0
13.4
Output Return Loss
10.0
13.6
Thermal Resistance
221
Test Conditions: Z0=50, VCC=3V, IC=25mA, T=30°C
Max.
18.7
4.5
4000
29.0
Unit
dB
dB
dB
dBm
dBm
dBm
dB
dB
dB
dB
MHz
mA
dB
dB
°C/W
850 MHz
1950 MHz
2400 MHz
850 MHz
1950 MHz
2400 MHz
850 MHz
1950 MHz
2400 MHz
1950 MHz
Condition
1950 MHz
1950 MHz
junction to backside
DS140429
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 7
1 page  
SGB2433Z
Recommended Land Pattern
Dimensions in millimeters (inches)
1.58 [0.062]
0.50 [0.020]
0.26 [0.010]
0.38 [0.015]
0.29 [0.011]
1.58 [0.062]
0.21 [0.008]
0.75 [0.030]
0.005 CHAMFER
(8PL)
Ø0.38 [Ø0.015]
Plated Thru (4PL)
Recommended PCB Soldermask for Land Pattern
0.50 [0.020]
0.25 [0.010]
0.53 [0.021]
3.17 [0.125]
1.20 [0.047]
0.46 [0.018]
1.20 [0.047]
Package Drawing
Dimensions in millimeters (inches)
DS140429
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SGB2433Z.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SGB2433Z | DC to 4GHZ ACTIVE BIAS GAIN BLOCK | RF Micro Devices |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |