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PDF SGB2400 Data sheet ( Hoja de datos )
| Número de pieza | SGB2400 | |
| Descripción | DC TO 4GHz ACTIVE BIAS SiGe HBT MMIC AMPLIFIER | |
| Fabricantes | RF Micro Devices | |
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SGB2400DC
to 4GHz Active
Bias SiGe HBT
MMIC Ampli-
fier
SGB2400
DC TO 4GHz ACTIVE BIAS SiGe HBT MMIC
AMPLIFIER
Package: Bare Die
Product Description
RFMD’s SGB2400 is a high performance Darlington SiGe HBT MMIC amplifier with on-chip
active bias circuitry. The active bias network provides stable current over temperature and pro-
cess Beta variations. The SGB2400 is designed to operate directly from a 3V supply. The
SGB2400 product is designed for high linearity 3V gain block applications that require small
size and minimal external components. The die is internally matched to 50.
RFMD can provide 100% DC screening, visual inspection, and Hi-Rel wafer qualification.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Gain and Return Loss - SGB2433Z
Packaged Part
25.0
20.0
15.0
10.0
5.0
0.0
-5.0
-10.0
-15.0
-20.0
-25.0
-30.0
-35.0
Gain
IRL
ORL
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Frequency (GHz)
Features
High Reliability SiGe HBT
Technology
Robust Class 1C ESD
P1dB = 6.9dBm at 1950MHz
IP3 = 18.0dBm at 1950MHz
Die Size: 0.75mm x 0.70mm
Applications
LO Buffer Amp
RF Pre-driver and RF Receive
Path
Military Communications
Test and Instrumentation
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Frequency of Operation
DC
4000
MHz
Small Signal Gain
19.1
dB Freq = 850MHz
15.7
17.2
18.7
dB Freq = 1950MHz
16.2
dB Freq = 2400MHz
Output Power at 1dB Compression
5.4
7.7
6.9
dBm
dBm
Freq = 850MHz
Freq = 1950MHz
Output IP3
6.2
19.5
dBm
dBm
Freq = 2400MHz
Freq = 850MHz
16.0
18.0
dBm
Freq = 1950MHz
18.0
dBm
Freq = 2400MHz
Input Return Loss
10.0
13.4
dB Freq = 1950MHz
Output Return Loss
10.0
13.6
dB Freq = 1950MHz
Current
21 25 29 mA
Noise Figure
3.5 4.5 dB Freq = 1950MHz
Thermal Resistance
221
°C/W
Junction to lead (33 pkg.)
Test Conditions: Z0 = 50, VCC = 3.0V, ID = 25mA, T = 30°C. OIP3 POUT/TONE = -10dBm with 1MHz tone spacing.
Note: Above data for SGB2433Z packaged part.
DS120619
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 5
1 page  
Pad Description
SGB2400
Bond Pad Description
Bond Pad Function/Description
VCC Supply voltage for the active bias circuit.
Bias This pad sources current from the active bias circuit. Connect the “BIAS” pad to the “OUT” pad through a choke inductor.
GND DC and RF ground returns for the circuit. These pads must be downbonded to system ground.
IN RF input pad. A DC block is required as voltage is present on this pad.
OUT RF output pad. A DC block is required as the Darlington pair is biased through this pad.
Notes:
1. All dimensions in inches [millimeters].
2. Die Thickness is 0.008 [0.203].
3. Typical bond pad is 0.004 (0.100) round.
4. Backside metallization: none.
5. Bond pad metallization: Aluminum.
Part Number
SGB2400
Ordering Information
Description
Devices/Container
Bare Die
Gel Pak
Quantity
10
DS120619
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SGB2400.PDF ] | |
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