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PDF SZA-6044 Data sheet ( Hoja de datos )
| Número de pieza | SZA-6044 | |
| Descripción | POWER AMPLIFIER | |
| Fabricantes | RF Micro Devices | |
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SZA-6044
5.1 GHz to 5.9
GHz ¼Watt
Power Ampli-
fier with Active
Bias
SZA-6044
5.1GHzto5.9GHz ¼WATT POWER AMPLIFIER
WITH ACTIVE BIAS
Package: QFN, 4mmx4mm
Product Description
RFMD’s SZA-6044 is a high linearity Class A GaAs Heterojunction Bipolar Transistor
(HBT) amplifier housed in a low-cost surface-mountable plastic package. These
HBT amplifiers are fabricated using molecular beam epitaxial growth technology
which produces reliable and consistent performance from wafer to wafer and lot to
lot. This product is specifically designed as a driver or final stage amplifier for equip-
ment in the 5.1GHzto5.9GHz band. It can run from a 3Vto5V supply. Load line
optimization for target band is possible outside the package. Its high linearity
makes it an ideal choice for multicarrier and digital applications.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Features
Single 3V to 5V Operation
High Linearity Class A
OIP3=39dBm at 5V
802.11a 54Mb/s
POUT=17dBm at 3% EVM
P1dB 24dBm at 5V, 21dBm at
3.3 V
Surface Mount Plastic Pack-
age
Power Up/Down Control <1s
Applications
OFDM
Multicarrier Applications
802.11a WiFi Driver Stage
Fixed Wireless, UNII
Parameter
Frequency of Operation,
Output Power at 1dB Compression
Small Signal Gain
Worst Case Input Return Loss
Worst Case Output Return Loss
Output IP3
POUT
Min.
5100
22.5
17.0
14.9
8.0
12.0
37.0
Specification
Typ.
24.9
24.6
24.0
18.5
17.3
16.4
11.0
17.0
39.0
17.0
Noise Figure,
7.8
Total Device Current
145.0
165.0
Thermal Resistance
56
Test Conditions: Z0=50, VCC=5V, I=165mA, TBP=30°C
Max.
5900
26.0
20.0
17.9
9.8
185.0
Unit
MHz
dBm
dBm
dBm
dB
dB
dB
dB
dB
dBm
dBm
dB
mA
°C/W
Condition
5.1 GHz
5.5 GHz
5.9 GHz
5.1 GHz
5.5 GHz
5.9 GHz
5.1 GHz to 5.9 GHz
5.1 GHz to 5.9 GHz
802.11a 54Mb/s POUT@3% [email protected],
I = 165 mA
5.9 GHz
IVBIAS+ICTOTAL= 150 mA, IVPC12=15 mA
junction - lead
DS110714
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 8
1 page  
SZA-6044
Pin
1, 2,
5, 6,
7, 8,
9, 10,
11,
15, 16
19
20
18
3,4
12,
13, 14
17
EPAD
Function
N/C
VPC2
VPC1
VBIAS
RFIN
RFOUT/ VC2
VC1
Gnd
Description
Pins are not used. May be grounded, left open or connected to adjacent pin.
VPC2 is the bias control pin for the stage 2 active bias circuit. An external series resistor is required for proper setting of
bias levels. Refer to the evaluation board schematic for resistor value.
VPC1 is the control pin for the stage 1 active bias circuits. An external series resistor is required for proper set-ting of
bias levels. Refer to the evaluation board schematic for resistor value.
VBIAS is the active bias circuit supply voltage. Can be operated from 3Vto5V.
RF input pin. This is DC grounded internal to the IC. Do not apply voltage to this pin. Both pins 3 and 4 must be used for
proper operation.
RF output and second stage collector supply voltage pin. VC2 in the range of 3Vto5V voltage should be sup-plied to this
pin through an external RF choke. Because DC biasing is present on this pin, a DC blocking capacitor should be used in
most applications (see evaluation board schematic). The supply side of the bias network should be well bypassed. The
output network and board layout specified in the app circuit is recommended for optimum performance. All pins 12-14
are required to be wired together at lead foot for proper operation.
VC1 is the first stage collector supply voltage. Can be operated over the range of 3Vto5V.
Exposed area on the bottom side of the package needs to be soldered to the ground plane of the board for optimum
thermal and RF performance. Several vias should be located under the EPAD as shown in the rec-ommended land pat-
tern.
DS110714
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 8
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