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SMUN5315DW の電気的特性と機能

SMUN5315DWのメーカーはSeCoSです、この部品の機能は「NPN / PNP Digital Small Signal Transistors」です。


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部品番号 SMUN5315DW
部品説明 NPN / PNP Digital Small Signal Transistors
メーカ SeCoS
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SMUN5315DW Datasheet, SMUN5315DW PDF,ピン配置, 機能
Elektronische Bauelemente
SMUN5311DW Series
NPN / PNP
Digital Small Signal Transistors
RoHS Compliant Product
A suffix of “-C” indicates halogen-free.
DESCRIPTION
The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic
bias network consisting of two resistors; a series base resistor and a base−emitter
resistor. These digital transistors are designed to replace a single device and its
external resistor bias network. The BRT eliminates these individual components by
integrating them into a single device. In the SMUN5311DW series, two
complementary BRT devices are housed in the SOT−363 package which is ideal
for low power surface mount applications where board space is at a premium.
FEATURE
Simplifies circuit design
Reduces board space
Reduces component count
Available in 8 mm, 7 inch/3000 unit tape and reel
The devices are Pb-Free
F
DG
SOT-363
A
E
L
B
K
C
H
J
6 54
Q2 R1 R2
R2
R1
Q1
12
3
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.00 2.20
2.15 2.45
1.15 1.35
0.90 1.10
1.20 1.40
0.15 0.35
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.15
0.650 TYP.
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS
(TA = 25°C unless otherwise noted, common for Q1 and Q 2, minus sign for Q1(PNP) omitted)
PARAMETER
SYMBOL
VALUE
Collector - Base Voltage
Collector - Emitter Voltage
Collector Currrent – Continuous
VCBO
50
VCEO
50
IC 100
ONE JUNCTION HEATED THERMAL CHARACTERISTICS
Total Device Dissipation, TA=25°C
Total Device Dissipation, Derate above 25°C
187(1)
256(2)
PD
1.5(1)
2.0(2)
Thermal Resistance, Junction to Ambient
670(1)
RθJA
490(2)
BOTH JUNCTION HEATED THERMAL CHARACTERISTICS
Total Device Dissipation, TA=25°C
Total Device Dissipation, Derate above 25°C
250(1)
385(2)
PD
2.0(1)
3.0(2)
Thermal Resistance, Junction to Ambient
493(1)
RθJA
325(2)
Thermal Resistance, Junction to Lead
188(1)
RθJL 208(2)
Junction Temperature & Storage Temperature
Note:
1. FR-4 @ minimum pad
2. FR-4 @ 1.0 x 1.0 inch pad
TJ,TSTG
-55~150
UNIT
Vdc
Vdc
mAdc
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C/W
°C
18-Dec-2009 Rev. A
Page 1 of 28

1 Page





SMUN5315DW pdf, ピン配列
Elektronische Bauelemente
SMUN5311DW Series
NPN / PNP
Digital Small Signal Transistors
ELECTRICAL CHARACTERISTICS(TA = 25°C unless otherwise noted)(Continued)
PARAMETER
SYMBOL MIN. TYP. MAX.
ON CHARACTERISTICS 3
SMUN5311DW
- - 0.2
SMUN5312DW
- - 0.2
SMUN5314DW
- - 0.2
SMUN5315DW
- - 0.2
SMUN5316DW
- - 0.2
Output Voltage(On)
SMUN5330DW
SMUN5331DW
VOL
-
-
- 0.2
- 0.2
SMUN5332DW
- - 0.2
SMUN5333DW
- - 0.2
SMUN5334DW
- - 0.2
SMUN5335DW
- - 0.2
SMUN5313DW
- - 0.2
SMUN5311DW
4.9 -
-
SMUN5312DW
4.9 -
-
SMUN5313DW
4.9 -
-
SMUN5314DW
4.9 -
-
SMUN5333DW
4.9 -
-
Output Voltage(Off)
SMUN5334DW
SMUN5335DW
VOH
4.9
4.9
-
-
-
-
SMUN5330DW
4.9 -
-
SMUN5315DW
4.9 -
-
SMUN5316DW
4.9 -
-
SMUN5331DW
4.9 -
-
SMUN5332DW
4.9 -
-
SMUN5311DW
7.0 10 13
SMUN5312DW
15.4 22 28.6
SMUN5313DW
32.9 47 61.1
SMUN5314DW
7.0 10 13
SMUN5315DW
7.0 10 13
Input Resistor
SMUN5316DW
SMUN5330DW
R1
3.3 4.7 6.1
0.7 1.0 1.3
SMUN5331DW
1.5 2.2 2.9
SMUN5332DW
3.3 4.7 6.1
SMUN5333DW
3.3 4.7 6.1
SMUN5334DW
15.4 22 28.6
SMUN5335DW
1.54 2.2 2.86
SMUN5311DW
0.8 1.0 1.2
SMUN5312DW
0.8 1.0 1.2
SMUN5313DW
0.8 1.0 1.2
SMUN5314DW
0.17
0.21
0.25
SMUN5315DW
---
Resistor Ratio
SMUN5316DW
---
R1/R2
SMUN5330DW
0.8 1.0 1.2
SMUN5331DW
0.8 1.0 1.2
SMUN5332DW
0.8 1.0 1.2
SMUN5333DW
0.055 0.1 0.185
SMUN5334DW
0.38
0.47
0.56
SMUN5335DW
Note:
3. Pulse test: pulse width <300 µS, duty cycle<2.0%
0.038
0.047
0.056
UNIT
TEST CONDITION
Vdc VCC=5V, VB=2.5V, RL=1 K
VCC=5V, VB=3.5V, RL=1 K
VCC=5V, VB=0.5V, RL=1 K
Vdc
VCC=5V, VB=0.05V, RL=1 K
VCC=5V, VB=0.25V, RL=1 K
K
18-Dec-2009 Rev. A
Page 3 of 28


3Pages


SMUN5315DW 電子部品, 半導体
Elektronische Bauelemente
SMUN5311DW Series
NPN / PNP
Digital Small Signal Transistors
CHARACTERISTIC CURVES
TYPICAL ELECTRICAL CHARACTERISTICS SMUN5311DW PNP TRANSISTOR
1
IC/BI = 10
1000
VCE = 10 V
TA = 2-5°C
100
0.1 25°C
75°C
TA = 5°7C
25°C
-25°C
0.010
20 30 40
IC, COLLEOCRT CURRENT (mA)
Figure 7. VCE(sat) versus IC
10
50 1
10
IC, COLLEOCRT CURRENT (mA)
Figure 8. DC Current Gain
100
4 100 75°C 25°C
f = 1 MHz
3
lE = 0 V
TA = 2°C5
10
TA = 2-5°C
1
2
0.1
1
0.01
VO =5 V
0
0 10 20 30 40 50 0.0010 1 2 3 4 5 6 7 8 9 10
VR, REVERSE BIASTAVGOEL (VOTLS)
Vin, INPUT TVAOGLE (VOTLS)
Figure 9. Output Capacitance
Figure 10. Output Current versus Input
Voltage
100
VO =0.2 V
10
1
TA = 2-5°C
25°C
75°C
18-Dec-2009 Rev. A
0.10
10
20 30
40
IC, COLLEOCRT CURRENT (mA)
50
Figure 11. Input Voltage versus Output Current
Page 6 of 28

6 Page



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部品番号部品説明メーカ
SMUN5315DW

NPN / PNP Digital Small Signal Transistors

SeCoS
SeCoS


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