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SMUN5214DW の電気的特性と機能

SMUN5214DWのメーカーはSeCoSです、この部品の機能は「NPN Multi-Chip Built-in Resistors Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 SMUN5214DW
部品説明 NPN Multi-Chip Built-in Resistors Transistor
メーカ SeCoS
ロゴ SeCoS ロゴ 




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SMUN5214DW Datasheet, SMUN5214DW PDF,ピン配置, 機能
Elektronische Bauelemente
SMUN52XXDW
NPN Multi-Chip
Built-in Resistors Transistor
The BRT (Bias Resistor Transistor) contains a single transistor
with a monolithic bias network consisting of two resistors; a series
base resistor and a base–emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias network.
The BRT eliminates these individual components by integrating them
into a single device. In the SMUN5211DW series, two BRT devices are
housed in the SOT–363 package which is ideal for low power surface
mount applications where board space is at a premium.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Pb-Free Package is available
6 54
Q2 R1 R2
R2
R1
Q1
12
3
MARKING DIAGRAM
6 54
7X
1 23
7X = Device Marking
.055(1.40)
.047(1.20)
SOT-363
.026TYP
(0.65TYP)
.021REF
(0.525)REF
8o
0o
.096(2.45)
.085(2.15)
.053(1.35)
.045(1.15)
.014(0.35)
.006(0.15)
.087(2.20)
.079(2.00)
.043(1.10)
.035(0.90)
.018(0.46)
.010(0.26)
.006(0.15)
.003(0.08)
.004(0.10)
.000(0.00)
.039(1.00)
.035(0.90)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 )
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
V CBO
V CEO
IC
Value
50
50
100
Unit
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic (One Junction Heated)
Total Device Dissipation T A = 25°C
Derate above 25°C
Thermal Resistance – Junction-to-Ambient
Characteristic (Both Junctions Heated)
Total Device Dissipation T A = 25°C
Derate above 25°C
Thermal Resistance – Junction-to-Ambient
Thermal Resistance – Junction-to-Lead
Junction and Storage Temperature
Symbol
PD
R JA
Symbol
PD
R θJA
R θJL
T J , T stg
Max
Note 1 Note 2
187 256
1.5 2.0
670 490
Max
Note 1
Note 2
250 385
2.0 3.0
493 325
188 208
–55 to +150
Unit
mW
mW/°C
°C/W
Unit
mW
mW/°C
°C/W
°C/W
°C
1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad
http://www.SeCoSGmbH.com
22-Jun-2007 Rev. A
Any changing of specification will not be informed individual
Page 1 of 8

1 Page





SMUN5214DW pdf, ピン配列
Elektronische Bauelemente
SMUN52XXDW
NPN Multi-Chip
Built-in Resistors Transistor
ELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ,)
Characteristic
Symbol
ON CHARACTERISTICS(Note 5.)
DC Current Gain
SMUN5211DW
h FE
(V CE = 10 V, I C = 5.0 mA)
SMUN5212DW
SMUN5213DW
SMUN5214DW
SMUN5215DW
SMUN5216DW
SMUN5230DW
SMUN5231DW
SMUN5232DW
SMUN5233DW
SMUN5234DW
SMUN5235DW
SMUN5236DW
SMUN5237DW
Collector-Emitter Saturation Voltage (IC= 10mA,IB= 0.3 mA) V CE(sat)
(I C= 10mA, I B= 5mA) SMUN5230DW/SMUN5231DW
(I C= 10mA, IB= 1mA) SMUN5215DW/SMUN5216DW
SMUN5232DW/SMUN5233DW/SMUN5234DW
Output Voltage (on)
(V CC = 5.0 V, V B = 2.5 V, R L = 1.0 k)
SMUN5211DW
SMUN5212DW
V OL
SMUN5214DW
SMUN5215DW
SMUN5216DW
SMUN5230DW
SMUN5231DW
SMUN5232DW
SMUN5233DW
SMUN5234DW
SMUN5235DW
(V CC = 5.0 V, V B = 3.5 V, R L = 1.0 k) SMUN5213DW
(V CC = 5.0 V, V B = 5.5 V, R L = 1.0 k) SMUN5236DW
(V CC = 5.0 V, V B = 4.0 V, R L = 1.0 k) SMUN5237DW
Output Voltage (off) (V CC = 5.0 V, V B = 0.5 V, R L = 1.0 k)
(V CC = 5.0 V, V B = 0.05 V, R L = 1.0 k) SMUN5230DW
V OH
(V CC = 5.0 V, V B = 0.25 V, R L = 1.0 k) SMUN5215DW
SMUN5216DW
SMUN5233DW
5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
(Continued)
Min Typ Max
35 60
60 100
80 140
80 140
160 350
160 350
3.0 5.0
8.0 15
15 30
80 200
80 150
80 140
80 150
80 140
– – 0.25
– – 0.2
– – 0.2
– – 0.2
– – 0.2
– – 0.2
– – 0.2
– – 0.2
– – 0.2
– – 0.2
– – 0.2
– – 0.2
– – 0.2
– – 0.2
– – 0.2
4.9 –
Unit
Vdc
Vdc
Vdc
http://www.SeCoSGmbH.com
22-Jun-2007 Rev. A
Any changing of specification will not be informed individual
Page 3 of 8


3Pages


SMUN5214DW 電子部品, 半導体
Elektronische Bauelemente
SMUN52XXDW
NPN Multi-Chip
Built-in Resistors Transistor
TYPICAL ELECTRICAL CHARACTERISTICS – SMUN5212DW
10 1000
1
100
0.1
0.01
0
4
20 40
I C , COLLECTOR CURRENT (mA)
Figure 7. V CE(sat) versus I C
10
50 1
100
10
I C , COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
100
3
2
1
0
0 10 20 30 40
V R , REVERSE BIAS VOLTAGE (VOLTS)
Figure 9. Output Capacitance
50
10
1
0.1
0.01
0.001
0
12
34
56
78
9 10
V in , INPUT VOLTAGE (VOLTS)
Figure 10. Output Current versus Input oltage
100
10
1
0.1
0 10
20
30
40 50
I C ,COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
http://www.SeCoSGmbH.com
22-Jun-2007 Rev. A
Any changing of specification will not be informed individual
Page 6 of 8

6 Page



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部品番号部品説明メーカ
SMUN5214DW

NPN Multi-Chip Built-in Resistors Transistor

SeCoS
SeCoS


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