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BUJ303ADのメーカーはNXP Semiconductorsです、この部品の機能は「NPN power transistor」です。 |
部品番号 | BUJ303AD |
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部品説明 | NPN power transistor | ||
メーカ | NXP Semiconductors | ||
ロゴ | |||
このページの下部にプレビューとBUJ303ADダウンロード(pdfファイル)リンクがあります。 Total 14 pages
BUJ303AD
NPN power transistor
Rev. 1 — 2 September 2011
Product data sheet
1. Product profile
1.1 General description
High voltage, high speed planar passivated NPN power switching transistor in a SOT428
(DPAK) surface mountable plastic package.
1.2 Features and benefits
Fast switching
Low thermal resistance
Surface mountable package
Very high voltage capability
Very low switching and conduction
losses
1.3 Applications
DC-to-DC converters
High frequency electronic lighting
ballasts
Inverters
Motor control systems
1.4 Quick reference data
Table 1.
Symbol
IC
Quick reference data
Parameter
collector current
Ptot
VCESM
total power dissipation
collector-emitter peak
voltage
Static characteristics
hFE DC current gain
Conditions
see Figure 1; see Figure 2;
see Figure 4
Tmb ≤ 25 °C; see Figure 3
VBE = 0 V
IC = 5 mA; VCE = 5 V;
Tmb = 25 °C; see Figure 11
IC = 500 mA; VCE = 5 V;
Tmb = 25 °C; see Figure 11
Min Typ Max Unit
- - 5A
- - 80 W
- - 1000 V
10 22 30
14 25 35
1 Page NXP Semiconductors
BUJ303AD
NPN power transistor
IBon
VBB
VCC
LC VCL(CE)
probe point
LB
DUT
001aab999
12
IC
(A)
8
003aag028
4
0
0 400 800 1200
VCEclamp (V)
Fig 1. Test circuit for reverse bias safe operating area Fig 2. Reverse bias safe operating area
120
Pder
(%)
80
001aab993
40
0
0 40 80 120 160
Tmb (°C)
Fig 3. Normalized total power dissipation as a function of mounting base temperature
BUJ303AD
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 2 September 2011
© NXP B.V. 2011. All rights reserved.
3 of 14
3Pages NXP Semiconductors
BUJ303AD
NPN power transistor
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Static characteristics
ICES collector-emitter cut-off VBE = 0 V; VCE = 1000 V; Tmb = 25 °C
current
VBE = 0 V; VCE = 1000 V; Tj = 125 °C
ICBO collector-base cut-off VCB = 1000 V; IE = 0 A; Tmb = 25 °C
current
ICEO collector-emitter cut-off VCE = 500 V; IB = 0 A; Tmb = 25 °C
current
IEBO
emitter-base cut-off
VEB = 9 V; IC = 0 A; Tmb = 25 °C
current
VCEOsus
VCEsat
collector-emitter
sustaining voltage
collector-emitter
saturation voltage
IB = 0 A; IC = 100 mA; LC = 25 mH;
Tmb = 25 °C; see Figure 6; see Figure 7
IC = 3 A; IB = 0.6 A; Tmb = 25 °C;
see Figure 8; see Figure 9
VBEsat
base-emitter saturation IC = 3 A; IB = 0.6 A; Tmb = 25 °C;
voltage
see Figure 10
hFE
DC current gain
IC = 5 mA; VCE = 5 V; Tmb = 25 °C;
see Figure 11
IC = 500 mA; VCE = 5 V; Tmb = 25 °C;
see Figure 11
hFEsat
DC saturation current IC = 2.5 A; VCE = 5 V; Tmb = 25 °C;
gain see Figure 11
IC = 3 A; VCE = 5 V; Tmb = 25 °C;
see Figure 11
Dynamic Characteristics (switching times - resistive load)
ts
turn-off delay time
IC = 2.5 A; IBon = 0.5 A; IBoff = -0.5 A;
tf fall time
RL = 75 Ω; VCC = 187.5 V; Tmb = 25 °C;
see Figure 12; see Figure 13
Dynamic Characteristics (switching times - inductive load)
ts
turn-off delay time
IC = 2.5 A; IBon = 0.5 A; VCC = 350 V;
ts
turn-off delay time
VBB = -5 V; LB = 1 µH; Tmb = 25 °C;
see Figure 14; see Figure 15
tf fall time
IC = 2.5 A; IBon = 0.5 A; VCC = 350 V;
VBB = -5 V; LB = 1 µH; Tj = 100 °C;
see Figure 14; see Figure 15
[1] Measured with half-sine wave voltage (curve tracer).
Min Typ Max Unit
[1] - - 1 mA
[1] - - 2 mA
[1] - - 1 mA
[1] - - 0.1 mA
- - 0.1 mA
500 - - V
- 0.25 1.5 V
- 0.97 1.3 V
10 22 30
14 25 35
10 13.5 17
- 12 -
-
3.4 4
µs
- 0.33 0.45 µs
- 1.4 1.6 µs
- 1.7 1.9 µs
- 145 160 ns
- 160 200 ns
BUJ303AD
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 2 September 2011
© NXP B.V. 2011. All rights reserved.
6 of 14
6 Page | |||
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