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BD681G の電気的特性と機能

BD681GのメーカーはON Semiconductorです、この部品の機能は「Plastic Medium-Power Silicon NPN Darlingtons」です。


製品の詳細 ( Datasheet PDF )

部品番号 BD681G
部品説明 Plastic Medium-Power Silicon NPN Darlingtons
メーカ ON Semiconductor
ロゴ ON Semiconductor ロゴ 




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BD681G Datasheet, BD681G PDF,ピン配置, 機能
BD675G, BD675AG,
BD677G, BD677AG,
BD679G, BD679AG, BD681G
Plastic Medium-Power
Silicon NPN Darlingtons
This series of plastic, medium−power silicon NPN Darlington
transistors can be used as output devices in complementary
general−purpose amplifier applications.
Features
High DC Current Gain
Monolithic Construction
Complementary to BD676, 676A, 678, 678A, 680, 680A, 682
BD677, 677A, 679, 679A are Equivalent to MJE 800, 801, 802, 803
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
BD675G, BD675AG
BD677G, BD677AG
BD679G, BD679AG
BD681G
VCEO
45
60
80
100
Vdc
Collector−Base Voltage
BD675G, BD675AG
BD677G, BD677AG
BD679G, BD679AG
BD681G
VCBO
45
60
80
100
Vdc
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
VEBO
IC
IB
PD
5.0
4.0
1.0
40
0.32
Vdc
Adc
Adc
W
W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg – 55 to + 150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction−to−Case RqJC
Max
3.13
Unit
°C/W
http://onsemi.com
4.0 AMPERES
POWER TRANSISTORS
NPN SILICON
60, 80, 100 VOLTS, 40 WATTS
COLLECTOR 2, 4
BASE 3
EMITTER 1
123
TO−225
CASE 77−09
STYLE 1
MARKING DIAGRAMS
YWW
BD6xxG
YWW
BD6xxAG
BD6xx/BD6xxA = Device Code
x = 75, 77, 79, 81
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 15
1
Publication Order Number:
BD675/D

1 Page





BD681G pdf, ピン配列
BD675G, BD675AG, BD677G, BD677AG, BD679G, BD679AG, BD681G
There are two limitations on the power handling ability of
a transistor average junction temperature and secondary
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; e.g., the transistor must not be subjected to greater
dissipation than the curves indicate.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by secondary breakdown.
NPN
BD675G, BD675AG
BD677G, BD677AG
BD679G, BD679AG
BD681G
BASE
COLLECTOR
[ 8.0 k [ 120
EMITTER
Figure 3. Darlington Circuit Schematic
ORDERING INFORMATION
Device
BD675G
BD675AG
BD677G
BD677AG
BD679G
BD679AG
BD681G
Package
TO−225
(Pb−Free)
TO−225
(Pb−Free)
TO−225
(Pb−Free)
TO−225
(Pb−Free)
TO−225
(Pb−Free)
TO−225
(Pb−Free)
TO−225
(Pb−Free)
Shipping
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
http://onsemi.com
3


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共有リンク

Link :


部品番号部品説明メーカ
BD681

Complementary power Darlington transistors

STMicroelectronics
STMicroelectronics
BD681

Medium Power Linear and Switching Applications

Fairchild Semiconductor
Fairchild Semiconductor
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DARLINGTON POWER TRANSISTORS NPN SILICON

ON Semiconductor
ON Semiconductor
BD681

(BD675A - BD681) SILICON POWER TRANSISTOR

SavantIC
SavantIC


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