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PDF NE5531079A Data sheet ( 特性 )
| 部品番号 | NE5531079A |
| |
| 部品説明 | 7.5V OPERATION SILICON RF POWER LDMOS FET | ||
| メーカ | Renesas | ||
| ロゴ |  |
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このページの下部にプレビューとNE5531079Aダウンロード（pdfファイル）リンクがあります。 Total 9 pages
DATA SHEET
SILICON POWER MOS FET
NE5531079A
7.5 V OPERATION SILICON RF POWER LDMOS FET
FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
DESCRIPTION
The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission
power amplifier for 7.5 V radio systems. Dies are manufactured using our NEWMOS-M1 technology and housed in a
surface mount package. This device can deliver 40.0 dBm output power with 68% power added efficiency at 460 MHz
under the 7.5 V supply voltage.
FEATURES
• High output power
: Pout = 40.0 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)
• High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)
• High linear gain
: GL = 20.5 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm)
• Surface mount package
: 5.7 × 5.7 × 1.1 mm MAX.
• Single supply
: VDS = 7.5 V MAX.
APPLICATIONS
• 460 MHz band radio systems
• 900 MHz band radio systems
ORDERING INFORMATION
Part Number
Order Number
Package
Marking
Supplying Form
NE5531079A
NE5531079A-A
79A (Pb-Free) W5 • 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
NE5531079A-T1 NE5531079A-T1-A
• 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• Qty 1 kpcs/reel
NE5531079A-T1A NE5531079A-T1A-A
• 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• Qty 5 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE5531079A
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. PU10752EJ01V0DS (1st edition)
Date Published April 2009 NS
Printed in Japan
2009
1 Page  
NE5531079A
TEST CIRCUIT (f = 460 MHz)
VGS
VDS
C1
1 μF
50 Ω
RFin
C10
10 pF
R1
4.7 kΩ
C2
1 000 pF
L1
123 nH
R2
150 Ω
C11
24 pF
C1
1 μF
C20
27 pF
C22 50 Ω
100 pF RFout
C21
1.8 pF
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS
Symbol
Value
Type
Maker
C1
1μF
GRM31CR72A105KA01B
Murata
C2
1 000 pF
GRM1882C1H102JA01
Murata
C10
10 pF
GRM1882C1H100JA01
Murata
C11
24 pF
ATC100A240JW
American Technical Ceramics
C20
27 pF
ATC100A270JW
American Technical Ceramics
C21
1.8 pF
ATC100A1R8BW
American Technical Ceramics
C22
100 pF
ATC100A101JW
American Technical Ceramics
R1
4.7 kΩ
1/8W Chip Resistor
−
R2
150 Ω
1/8W Chip Resistor
−
L1
123 nH
φ 0.5 mm, φ D = 3 mm, 10 Turns
Ohesangyou
PCB
− R4775, t = 0.4 mm, εr = 4.5, size = 30 × 48 mm
−
Data Sheet PU10752EJ01V0DS
3
3Pages 
NE5531079A
S-PARAMETERS
S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import
of the parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.necel.com/microwave/en/
6 Data Sheet PU10752EJ01V0DS
6 Page | |||
| ページ | 合計 : 9 ページ | ||
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PDF ダウンロード | [ NE5531079A.PDF ] | |
共有リンク
Link :おすすめデータシート
| 部品番号 | 部品説明 | メーカ |
| NE5531079A | SILICON POWER MOS FET |  California Eastern Labs |
| NE5531079A | 7.5V OPERATION SILICON RF POWER LDMOS FET | Renesas |