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SDD07N65 の電気的特性と機能

SDD07N65のメーカーはSamHop Microelectronicsです、この部品の機能は「N-Channel Enhancement Mode Field Effect Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 SDD07N65
部品説明 N-Channel Enhancement Mode Field Effect Transistor
メーカ SamHop Microelectronics
ロゴ SamHop Microelectronics ロゴ 




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SDD07N65 Datasheet, SDD07N65 PDF,ピン配置, 機能
SDU/D07N65Green
Product
Sa mHop Microelectronics C orp.
Ver 1.0
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS ID RDS(ON) (Ω) Typ
650V
7A
1.2 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
D
G
S
SDU SERIES
TO-252(D-PAK)
G
DS
SDD SERIES
TO-251S(I-PAK)
G
DS
SDD SERIES
TO-251L(I-PAK)
ORDERING INFORMATION
Ordering Code
Package
SDU07N65HZ
TO-252
SDD07N65HS
TO-251S
SDD07N65HL
TO-251L
Marking Code
SDU07N65
SDD07N65
SDD07N65
Delivery Mode
Reel
Tube
Tube
RoHS Status
Halogen Free
Halogen Free
Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous c
TC=25°C
TC=100°C
IDM -Pulsed a c
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation
TC=25°C
TC=100°C
Limit
650
±30
7
5
21
480
94
47
Units
V
V
A
A
A
mJ
W
W
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 175
°C
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
1.6 °C/W
50 °C/W
Details are subject to change without notice.
1
Nov,25,2014
www.samhop.com.tw

1 Page





SDD07N65 pdf, ピン配列
SDU/D07N65
10
VGS = 10V
8
VGS = 5V
6
4
2
VGS = 4V
0
0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
Ver 1.0
3.0
2.4
Tj = 125 C
1.8
-55 C
1.2
25 C
0.6
0
0 123456
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
3.0
2.5
2.0
1.5 VGS = 10V
1.0
0.5
0.0
0.1 2 4 6 8 10
ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
3.0
2.6
2.2 VGS = 10V
ID = 3.5A
1.8
1.4
1.0
0
0 25 50 75 100 125 150
Tj, Junction Temperature(° C ) T j( C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
VDS = VGS
ID = 250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
3
1.15
ID = 250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
Nov,25,2014
www.samhop.com.tw


3Pages


SDD07N65 電子部品, 半導体
SDU/D07N65
TO-252
E
b3
L3
D
1
H
23
L4
b
e
A
c2
b2
DETAIL "A"
c
L2
L
L1
A1
DETAIL "A"
E1
D1
Ver 1.0
SYMBOLS
A
A1
b
b2
b3
c
c2
D
D1
e
E
E1
H
L
L1
L2
L3
L4
MILLIMETERS
MIN MAX
2.200
2.380
0.000
0.127
0.635
0.889
0.762
1.143
5.200
5.460
0.450
0.600
0.450
0.580
6.000
6.223
5.210
5.380
2.286 BSC
6.400
6.731
4.318
4.900
9.400
10.400
1.400
1.770
2.743 REF
0.508 BSC
0.890
1.270
0.640
1.010
0° 10°
Nov,25,2014
6 www.samhop.com.tw

6 Page



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部品番号部品説明メーカ
SDD07N65

N-Channel Enhancement Mode Field Effect Transistor

SamHop Microelectronics
SamHop Microelectronics


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