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SDD03N70のメーカーはSamHop Microelectronicsです、この部品の機能は「N-Channel Enhancement Mode Field Effect Transistor」です。 |
部品番号 | SDD03N70 |
| |
部品説明 | N-Channel Enhancement Mode Field Effect Transistor | ||
メーカ | SamHop Microelectronics | ||
ロゴ | |||
このページの下部にプレビューとSDD03N70ダウンロード(pdfファイル)リンクがあります。 Total 11 pages
SDU/D03N70Green
Product
SamHop Microelectronics corp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.1
PRODUCT SUMMARY
VDSS ID RDS(ON) (Ω) Typ
700V
3A
3.9 @VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
D
G
S
SDU SERIES
TO-252(D-PAK)
G
DS
SDD SERIES
TO-251S(I-PAK)
G
DS
SDD SERIES
TO-251L(I-PAK)
ORDERING INFORMATION
Ordering Code
Package
SDU03N70HZ
TO-252
Marking Code
SDU03N70
Delivery Mode
Reel
RoHS Status
Halogen Free
SDD03N70HS
TO-251S
SDD03N70
Tube
Halogen Free
SDD03N70HL
TO-251L
SDD03N70
Tube
Halogen Free
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Symbol
VDS
VGS
ID
IDM
EAS
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
-Pulsed a
Single Pulse Avalanche Energy c
Maximum Power Dissipation
TC=25°C
TC=70°C
TC=25°C
TC=70°C
Limit
700
±30
3
2.5
9
156
75
52.5
Units
V
V
A
A
A
mJ
W
W
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 175
°C
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
2 °C/W
50 °C/W
Details are subject to change without notice.
1
Dec,24,2013
www.samhop.com.tw
1 Page SDU/D03N70
5
VGS=10V
4
3
2 VGS=5V
1
VGS=4V
0
0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
12
10
8
6 VGS=10V
4
2
0
0.1 1 2 3 4
ID, Drain Current (A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Ver 1.1
2.0
1.6
Tj=125 C
1.2
-55 C
0.8
25 C
0.4
0
0 1 23 456
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
3.0
2.6
VGS=10V
2.2 ID=1.5A
1.8
1.4
1.0
0
0 25 50 75 100 125 150
Tj( C)
Tj, Junction Temperature ( C)
Figure 4. On-Resistance Variation with
Drain Current and Temperature
1.6
VDS=VGS
1.4 ID=250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation
with Temperature
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C)
Figure 6. Breakdown Voltage Variation
with Temperature
Dec,24,2013
3 www.samhop.com.tw
3Pages SDU/D03N70
TO-252
E
b3
L3
D
1
H
23
L4
b
e
A
c2
b2
DETAIL "A"
c
L2
L
L1
A1
DETAIL "A"
E1
D1
Ver 1.1
SYMBOLS
A
A1
b
b2
b3
c
c2
D
D1
e
E
E1
H
L
L1
L2
L3
L4
MILLIMETERS
MIN
2.200
0.000
0.635
MAX
2.380
0.127
0.889
0.762
1.143
5.200
5.460
0.450
0.600
0.450
0.580
6.000
6.223
5.210
5.380
2.286 BSC
6.400
6.731
4.318
4.900
9.400
10.400
1.400
1.770
2.743 REF
0.508 BSC
0.890
1.270
0.640
1.010
0° 10°
Dec,24,2013
6 www.samhop.com.tw
6 Page | |||
ページ | 合計 : 11 ページ | ||
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部品番号 | 部品説明 | メーカ |
SDD03N70 | N-Channel Enhancement Mode Field Effect Transistor | SamHop Microelectronics |