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SDD02N70のメーカーはSamHop Microelectronicsです、この部品の機能は「N-Channel Enhancement Mode Field Effect Transistor」です。 |
部品番号 | SDD02N70 |
| |
部品説明 | N-Channel Enhancement Mode Field Effect Transistor | ||
メーカ | SamHop Microelectronics | ||
ロゴ | |||
このページの下部にプレビューとSDD02N70ダウンロード(pdfファイル)リンクがあります。 Total 11 pages
Green SDU/D02N70
Product
Sa mHop Microelectronics C orp.
Ver 1.1
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (Ω) Typ
700V
2A
5 @VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
D
G
S
SDU SERIES
TO-252(D-PAK)
G
DS
SDD SERIES
TO-251S(I-PAK)
G
DS
SDD SERIES
TO-251L(I-PAK)
ORDERING INFORMATION
Ordering Code
Package
SDU02N70HZ
TO-252
SDD02N70HS
TO-251S
SDD02N70HL
TO-251L
Marking Code
SDU02N70
SDD02N70
SDD02N70
Delivery Mode
Reel
Tube
Tube
RoHS Status
Halogen Free
Halogen Free
Halogen Free
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Symbol
VDS
VGS
ID
IDM
EAS
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
-Pulsed a
Single Pulse Avalanche Energy c
Maximum Power Dissipation
TC=25°C
TC=70°C
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
Limit
700
±30
2
1.6
5
81
50
35
-55 to 175
Units
V
V
A
A
A
mJ
W
W
°C
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
3 °C/W
50 °C/W
Details are subject to change without notice.
1
Dec,24,2013
www.samhop.com.tw
1 Page SDU/D02N70
3.0
VGS=10V
2.4
VGS=5V
1.8
1.2
0.6 VGS=4V
0
0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
12
10
8 VGS=10V
6
4
2
0
0.1 0.6 1.2 1.8 2.4 3.0
ID, Drain Current (A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.6
VDS=VGS
1.4 ID=250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation
with Temperature
3
Ver 1.1
1.20
0.96
Tj=125 C
0.72
-55 C
0.48
25 C
0.24
0
01 23456
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
3.0
2.6
VGS=10V
2.2 ID=1A
1.8
1.4
1.0
0.6
0
25 50 75 100 125 150
Tj( C)
Tj, Junction Temperature ( C)
Figure 4. On-Resistance Variation with
Drain Current and Temperature
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C)
Figure 6. Breakdown Voltage Variation
with Temperature
Dec,24,2013
www.samhop.com.tw
3Pages SDU/D02N70
TO-252
E
b3
L3
D
1
H
23
L4
b
e
A
c2
b2
DETAIL "A"
c
L2
L
L1
A1
DETAIL "A"
E1
D1
Ver 1.1
SYMBOLS
A
A1
b
b2
b3
c
c2
D
D1
e
E
E1
H
L
L1
L2
L3
L4
MILLIMETERS
MIN
2.200
0.000
0.635
MAX
2.380
0.127
0.889
0.762
1.143
5.200
5.460
0.450
0.600
0.450
0.580
6.000
6.223
5.210
5.380
2.286 BSC
6.400
6.731
4.318
4.900
9.400
10.400
1.400
1.770
2.743 REF
0.508 BSC
0.890
1.270
0.640
1.010
0° 10°
Dec,24,2013
6 www.samhop.com.tw
6 Page | |||
ページ | 合計 : 11 ページ | ||
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部品番号 | 部品説明 | メーカ |
SDD02N70 | N-Channel Enhancement Mode Field Effect Transistor | SamHop Microelectronics |