DataSheet.jp

SDU02N70 の電気的特性と機能

SDU02N70のメーカーはSamHop Microelectronicsです、この部品の機能は「N-Channel Enhancement Mode Field Effect Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 SDU02N70
部品説明 N-Channel Enhancement Mode Field Effect Transistor
メーカ SamHop Microelectronics
ロゴ SamHop Microelectronics ロゴ 




このページの下部にプレビューとSDU02N70ダウンロード(pdfファイル)リンクがあります。
Total 11 pages

No Preview Available !

SDU02N70 Datasheet, SDU02N70 PDF,ピン配置, 機能
Green SDU/D02N70
Product
Sa mHop Microelectronics C orp.
Ver 1.1
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (Ω) Typ
700V
2A
5 @VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
D
G
S
SDU SERIES
TO-252(D-PAK)
G
DS
SDD SERIES
TO-251S(I-PAK)
G
DS
SDD SERIES
TO-251L(I-PAK)
ORDERING INFORMATION
Ordering Code
Package
SDU02N70HZ
TO-252
SDD02N70HS
TO-251S
SDD02N70HL
TO-251L
Marking Code
SDU02N70
SDD02N70
SDD02N70
Delivery Mode
Reel
Tube
Tube
RoHS Status
Halogen Free
Halogen Free
Halogen Free
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Symbol
VDS
VGS
ID
IDM
EAS
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
-Pulsed a
Single Pulse Avalanche Energy c
Maximum Power Dissipation
TC=25°C
TC=70°C
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
Limit
700
±30
2
1.6
5
81
50
35
-55 to 175
Units
V
V
A
A
A
mJ
W
W
°C
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
3 °C/W
50 °C/W
Details are subject to change without notice.
1
Dec,24,2013
www.samhop.com.tw

1 Page





SDU02N70 pdf, ピン配列
SDU/D02N70
3.0
VGS=10V
2.4
VGS=5V
1.8
1.2
0.6 VGS=4V
0
0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
12
10
8 VGS=10V
6
4
2
0
0.1 0.6 1.2 1.8 2.4 3.0
ID, Drain Current (A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.6
VDS=VGS
1.4 ID=250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation
with Temperature
3
Ver 1.1
1.20
0.96
Tj=125 C
0.72
-55 C
0.48
25 C
0.24
0
01 23456
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
3.0
2.6
VGS=10V
2.2 ID=1A
1.8
1.4
1.0
0.6
0
25 50 75 100 125 150
Tj( C)
Tj, Junction Temperature ( C)
Figure 4. On-Resistance Variation with
Drain Current and Temperature
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C)
Figure 6. Breakdown Voltage Variation
with Temperature
Dec,24,2013
www.samhop.com.tw


3Pages


SDU02N70 電子部品, 半導体
SDU/D02N70
TO-252
E
b3
L3
D
1
H
23
L4
b
e
A
c2
b2
DETAIL "A"
c
L2
L
L1
A1
DETAIL "A"
E1
D1
Ver 1.1
SYMBOLS
A
A1
b
b2
b3
c
c2
D
D1
e
E
E1
H
L
L1
L2
L3
L4
MILLIMETERS
MIN
2.200
0.000
0.635
MAX
2.380
0.127
0.889
0.762
1.143
5.200
5.460
0.450
0.600
0.450
0.580
6.000
6.223
5.210
5.380
2.286 BSC
6.400
6.731
4.318
4.900
9.400
10.400
1.400
1.770
2.743 REF
0.508 BSC
0.890
1.270
0.640
1.010
0° 10°
Dec,24,2013
6 www.samhop.com.tw

6 Page



ページ 合計 : 11 ページ
 
PDF
ダウンロード
[ SDU02N70 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
SDU02N70

N-Channel Enhancement Mode Field Effect Transistor

SamHop Microelectronics
SamHop Microelectronics


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap