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SDU02N60 の電気的特性と機能

SDU02N60のメーカーはSamHop Microelectronicsです、この部品の機能は「N-Channel Enhancement Mode Field Effect Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 SDU02N60
部品説明 N-Channel Enhancement Mode Field Effect Transistor
メーカ SamHop Microelectronics
ロゴ SamHop Microelectronics ロゴ 




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SDU02N60 Datasheet, SDU02N60 PDF,ピン配置, 機能
SDU/D02N60Green
Product
Sa mHop Microelectronics C orp.
Ver 2.2
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS ID RDS(ON) (Ω) Max
600V
2A
4.7 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
D
G
S
SDU SERIES
TO-252(D-PAK)
G
DS
SDD SERIES
TO-251S(I-PAK)
G
DS
SDD SERIES
TO-251L(I-PAK)
ORDERING INFORMATION
Ordering Code
Package
SDU02N60HZ
TO-252
SDD02N60HS
TO-251S
SDD02N60HL
TO-251L
Marking Code
SDU02N60
SDD02N60
SDD02N60
Delivery Mode
Reel
Tube
Tube
RoHS Status
Halogen Free
Halogen Free
Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a d
TC=25°C
TC=100°C
IDM -Pulsed b
PD
Maximum Power Dissipation
TC=25°C
TC=100°C
Limit
600
±30
2
1.3
5.8
42
17
Units
V
V
A
A
A
W
W
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
3 °C/W
50 °C/W
Details are subject to change without notice.
1
Dec,24,2013
www.samhop.com.tw

1 Page





SDU02N60 pdf, ピン配列
SDU/D02N60
5
4
VGS = 10V
3 VGS = 6V
2
VGS = 5V
1
0
0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
9.0
7.5
6.0
4.5
3.0 V G S =10V
1.5
0
0.1 0.7 1.4 2.1 2.8 3.5
ID, Drain Current (A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.6
1.4
V DS =V G S
ID=250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation
with Temperature
3
Ver 2.2
1.80
1.44
1.08
Tj=125 C
-55 C
0.72
25 C
0.36
0
0 1.2 2.4 3.6 4.8 6.0 7.2
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
3.0
2.6
2.2 V G S =10V
ID= 1A
1.8
1.4
1.0
0
0 25 50 75 100 125 150
Tj( C)
Tj, Junction Temperature ( C)
Figure 4. On-Resistance Variation with
Drain Current and Temperature
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C)
Figure 6. Breakdown Voltage Variation
with Temperature
Dec,24,2013
www.samhop.com.tw


3Pages


SDU02N60 電子部品, 半導体
SDU/D02N60
TO-252
E
b3
L3
D
1
H
23
L4
b
e
A
c2
b2
DETAIL "A"
c
L2
L
L1
A1
DETAIL "A"
E1
D1
Ver 2.2
SYMBOLS
A
A1
b
b2
b3
c
c2
D
D1
e
E
E1
H
L
L1
L2
L3
L4
MILLIMETERS
MIN
2.200
0.000
0.635
MAX
2.380
0.127
0.889
0.762
1.143
5.200
5.460
0.450
0.600
0.450
0.580
6.000
6.223
5.210
5.380
2.286 BSC
6.400
6.731
4.318
4.900
9.400
10.400
1.400
1.770
2.743 REF
0.508 BSC
0.890
1.270
0.640
1.010
0° 10°
Dec,24,2013
6 www.samhop.com.tw

6 Page



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部品番号部品説明メーカ
SDU02N60

N-Channel Enhancement Mode Field Effect Transistor

SamHop Microelectronics
SamHop Microelectronics


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