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SDK03N04 の電気的特性と機能

SDK03N04のメーカーはSamHop Microelectronicsです、この部品の機能は「N-Channel Enhancement Mode Field Effect Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 SDK03N04
部品説明 N-Channel Enhancement Mode Field Effect Transistor
メーカ SamHop Microelectronics
ロゴ SamHop Microelectronics ロゴ 




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SDK03N04 Datasheet, SDK03N04 PDF,ピン配置, 機能
SDK03N04Green
Product
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
Ver 1.3
PRODUCT SUMMARY
VDSS
ID RDS(ON) (Ω) Typ
400V
1.5A
3.5 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
SOT-89 Package.
D
D
SOT-89
S
D
G
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a
TA=25°C
TA=70°C
IDM -Pulsed b
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
Limit
400
±30
1.5
1.2
6
10.4
1.25
0.8
-55 to 150
100
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
Details are subject to change without notice.
1
Jan,17,2013
www.samhop.com.tw

1 Page





SDK03N04 pdf, ピン配列
SDK03N04
4.0
3.5 VGS = 10V
3.0
2.5
2.0
1.5
1.0
0.5
0
0
VGS = 6V
VGS = 5.5V
VGS = 5V
5 10 15 20 25 30
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
7
6
5
4
3
VGS = 10V
2
1
1 0.6 1.2 1.8 2.4 3.0
ID, Drain Current (A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.2
1.1
V DS =V G S
ID=250uA
1.0
0.9
0.8
0.7
0.6
0.5
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation
with Temperature
3
Ver 1.3
1.0
0.8
0.6
Tj=125 C
0.4 -55 C
25 C
0.2
0
0 1 2 3 4 56
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.5
2.2
V G S =10V
1.9 ID= 1A
1.6
1.3
1.0
0.7
0
25 50 75 100 125 150
Tj( C)
Tj, Junction Temperature ( C)
Figure 4. On-Resistance Variation with
Drain Current and Temperature
1.3
ID=250uA
1.2
1.1
1.0
0.9
0.8
0.7
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C)
Figure 6. Breakdown Voltage Variation
with Temperature
Jan,17,2013
www.samhop.com.tw


3Pages


SDK03N04 電子部品, 半導体
SDK03N04
PACKAGE OUTLINE DIMENSIONS
SOT-89
A
B
B1
Ver 1.3
F
E
D
REF.
A
A1
B
B1
C
C1
D
E
F
F1
F2
G
H
DIME NS IONS
Milimeters
MIN.
MAX.
4.40
4.05
1.50
1.30
4.60
4.25
1.70
1.50
2.40
0.89
0.40
1.40
0.35
3.00
1.50
5±
0.70
2.60
1.20
REF.
REF.
0.52
1.60
0.41
TYP.
REF.
6
G
Jan,17,2013
www.samhop.com.tw

6 Page



ページ 合計 : 7 ページ
 
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共有リンク

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部品番号部品説明メーカ
SDK03N04

N-Channel Enhancement Mode Field Effect Transistor

SamHop Microelectronics
SamHop Microelectronics


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