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SDF08N60 の電気的特性と機能

SDF08N60のメーカーはSamHop Microelectronicsです、この部品の機能は「N-Channel Enhancement Mode Field Effect Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 SDF08N60
部品説明 N-Channel Enhancement Mode Field Effect Transistor
メーカ SamHop Microelectronics
ロゴ SamHop Microelectronics ロゴ 




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SDF08N60 Datasheet, SDF08N60 PDF,ピン配置, 機能
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
SDP08N60
SDF08N60
Ver 2.1
PRODUCT SUMMARY
VDSS ID RDS(ON) (Ω) Typ
600V 8A 0.89 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-220 and TO-220F Package.
D
GDS
SDP SERIES
TO-220
GDS
SDF SERIES
TO-220F
G
S
ORDERING INFORMATION
Ordering Code
Package
SDP08N60HZ
TO-220
SDP08N60PZ
TO-220
SDF08N60HZ
TO-220F
SDF08N60PZ
TO-220F
Marking Code
SDP08N60
08N60
SDF08N60
08N60
Delivery Mode
Tube
Tube
Tube
Tube
RoHS Status
Halogen Free
Pb Free
Halogen Free
Pb Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
SDP08N60 SDF08N60
VDS Drain-Source Voltage
600
VGS Gate-Source Voltage
±30 ±30
ID
Drain Current-Continuous a
TC=25°C
TC=100°C
88
5.7 5.7
IDM -Pulsed a
23 23
EAS Single Pulse Avalanche Energy c
400
PD
Maximum Power Dissipation
TC=25°C
TC=100°C
150 50
75 25
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 175
Units
V
V
A
A
A
mJ
W
W
°C
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1 3 °C/W
62.5 62.5 °C/W
Details are subject to change without notice.
1
Dec,24,2013
www.samhop.com.tw

1 Page





SDF08N60 pdf, ピン配列
SDP08N60
SDF08N60
15
VGS =10V
12
VGS =7V
9
6
VGS =6V
3
VGS =5V
0
0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
Ver 2.1
6.0
4.8
3.6
2.4
T j=125 C
1.2 -55 C
25 C
0
0 1.4 2.8 4.2 5.6 7.0 8.4
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
3.0
2.5
2.0
1.5
V GS =10V
1.0
0.5
0
0.1 3 6 9 12 15
ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
3.0
2.6
2.2 V G S =10V
ID=4A
1.8
1.4
1.0
0
0 25 50 75 100 125 150
Tj, Junction Temperature(° C ) T j( C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
V DS =V G S
ID=250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
3
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
Dec,24,2013
www.samhop.com.tw


3Pages


SDF08N60 電子部品, 半導体
SDP08N60
SDF08N60
Ver 2.1
Dec,24,2013
6 www.samhop.com.tw

6 Page



ページ 合計 : 11 ページ
 
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[ SDF08N60 データシート.PDF ]


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部品番号部品説明メーカ
SDF08N60

N-Channel Enhancement Mode Field Effect Transistor

SamHop Microelectronics
SamHop Microelectronics


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