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SDP04N65 の電気的特性と機能

SDP04N65のメーカーはSamHop Microelectronicsです、この部品の機能は「N-Channel Enhancement Mode Field Effect Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 SDP04N65
部品説明 N-Channel Enhancement Mode Field Effect Transistor
メーカ SamHop Microelectronics
ロゴ SamHop Microelectronics ロゴ 




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SDP04N65 Datasheet, SDP04N65 PDF,ピン配置, 機能
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
SDP04N65
SDF04N65
Ver 2.2
PRODUCT SUMMARY
VDSS ID RDS(ON) (Ω) Typ
650V
4A
2.3 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-220 and TO-220F Package.
D
GDS
SDP SERIES
TO-220
GDS
SDF SERIES
TO-220F
G
S
ORDERING INFORMATION
Ordering Code
Package
SDP04N65HZ
TO-220
SDP04N65PZ
TO-220
SDF04N65HZ
TO-220F
SDF04N65PZ
TO-220F
Marking Code
SDP04N65
04N65
SDF04N65
04N65
Delivery Mode
Tube
Tube
Tube
Tube
RoHS Status
Halogen Free
Pb Free
Halogen Free
Pb Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
SDP04N65 SDF04N65
VDS Drain-Source Voltage
VGS Gate-Source Voltage
650
±30 ±30
ID
Drain Current-Continuous a
TC=25°C
TC=100°C
44
2.8 2.8
IDM -Pulsed a
12 12
EAS Single Pulse Avalanche Energy c
324
PD
Maximum Power Dissipation
TC=25°C
TC=100°C
94 31
47 15.6
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 175
Units
V
V
A
A
A
mJ
W
W
°C
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1.6 4.8
62.5 62.5
°C/W
°C/W
Details are subject to change without notice.
1
Dec,24,2013
www.samhop.com.tw

1 Page





SDP04N65 pdf, ピン配列
SDP04N65
SDF04N65
7
6
VGS = 10V
VGS = 6V
5
4 VGS = 5V
3
2
VGS = 4V
1
0
0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
Ver 2.2
1.5
1.2
Tj = 125 C
0.9
-55 C
0.6
25 C
0.3
0
0 1.2 2.4 3.6 4.8 6.0 7.2
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
6
5
4
3 VGS = 10V
2
1
0
1 2345 67
ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
3.0
2.6
2.2 VGS = 10V
ID = 2A
1.8
1.4
1.0
0
0 25 50 75 100 125 150
Tj, Junction Temperature(° C ) T j( C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
VDS = VGS
ID = 250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
3
1.15
ID = 250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
Dec,24,2013
www.samhop.com.tw


3Pages


SDP04N65 電子部品, 半導体
SDP04N65
SDF04N65
Ver 2.2
Dec,24,2013
6 www.samhop.com.tw

6 Page



ページ 合計 : 11 ページ
 
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[ SDP04N65 データシート.PDF ]


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共有リンク

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部品番号部品説明メーカ
SDP04N60

N-Channel Enhancement Mode Field Effect Transistor

SamHop Microelectronics
SamHop Microelectronics
SDP04N65

N-Channel Enhancement Mode Field Effect Transistor

SamHop Microelectronics
SamHop Microelectronics


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