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SDP04N65のメーカーはSamHop Microelectronicsです、この部品の機能は「N-Channel Enhancement Mode Field Effect Transistor」です。 |
部品番号 | SDP04N65 |
| |
部品説明 | N-Channel Enhancement Mode Field Effect Transistor | ||
メーカ | SamHop Microelectronics | ||
ロゴ | |||
このページの下部にプレビューとSDP04N65ダウンロード(pdfファイル)リンクがあります。 Total 11 pages
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
SDP04N65
SDF04N65
Ver 2.2
PRODUCT SUMMARY
VDSS ID RDS(ON) (Ω) Typ
650V
4A
2.3 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-220 and TO-220F Package.
D
GDS
SDP SERIES
TO-220
GDS
SDF SERIES
TO-220F
G
S
ORDERING INFORMATION
Ordering Code
Package
SDP04N65HZ
TO-220
SDP04N65PZ
TO-220
SDF04N65HZ
TO-220F
SDF04N65PZ
TO-220F
Marking Code
SDP04N65
04N65
SDF04N65
04N65
Delivery Mode
Tube
Tube
Tube
Tube
RoHS Status
Halogen Free
Pb Free
Halogen Free
Pb Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
SDP04N65 SDF04N65
VDS Drain-Source Voltage
VGS Gate-Source Voltage
650
±30 ±30
ID
Drain Current-Continuous a
TC=25°C
TC=100°C
44
2.8 2.8
IDM -Pulsed a
12 12
EAS Single Pulse Avalanche Energy c
324
PD
Maximum Power Dissipation
TC=25°C
TC=100°C
94 31
47 15.6
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 175
Units
V
V
A
A
A
mJ
W
W
°C
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1.6 4.8
62.5 62.5
°C/W
°C/W
Details are subject to change without notice.
1
Dec,24,2013
www.samhop.com.tw
1 Page SDP04N65
SDF04N65
7
6
VGS = 10V
VGS = 6V
5
4 VGS = 5V
3
2
VGS = 4V
1
0
0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
Ver 2.2
1.5
1.2
Tj = 125 C
0.9
-55 C
0.6
25 C
0.3
0
0 1.2 2.4 3.6 4.8 6.0 7.2
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
6
5
4
3 VGS = 10V
2
1
0
1 2345 67
ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
3.0
2.6
2.2 VGS = 10V
ID = 2A
1.8
1.4
1.0
0
0 25 50 75 100 125 150
Tj, Junction Temperature(° C ) T j( C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
VDS = VGS
ID = 250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
3
1.15
ID = 250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
Dec,24,2013
www.samhop.com.tw
3Pages SDP04N65
SDF04N65
Ver 2.2
Dec,24,2013
6 www.samhop.com.tw
6 Page | |||
ページ | 合計 : 11 ページ | ||
|
PDF ダウンロード | [ SDP04N65 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
SDP04N60 | N-Channel Enhancement Mode Field Effect Transistor | SamHop Microelectronics |
SDP04N65 | N-Channel Enhancement Mode Field Effect Transistor | SamHop Microelectronics |