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SDP02N65のメーカーはSamHop Microelectronicsです、この部品の機能は「N-Channel Enhancement Mode Field Effect Transistor」です。 |
部品番号 | SDP02N65 |
| |
部品説明 | N-Channel Enhancement Mode Field Effect Transistor | ||
メーカ | SamHop Microelectronics | ||
ロゴ | |||
このページの下部にプレビューとSDP02N65ダウンロード(pdfファイル)リンクがあります。 Total 11 pages
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
SDP02N65
SDF02N65
Ver 2.1
PRODUCT SUMMARY
VDSS ID RDS(ON) (Ω) Max
650V
2A
5.6 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-220 and TO-220F Package.
D
GDS
SDP SERIES
TO-220
GDS
SDF SERIES
TO-220F
G
S
ORDERING INFORMATION
Ordering Code
Package
SDP02N65HZ
TO-220
Marking Code
SDP02N65
Delivery Mode
Tube
RoHS Status
Halogen Free
SDP02N65PZ
SDF02N65HZ
SDF02N65PZ
TO-220
TO-220F
TO-220F
02N65
SDF02N65
02N65
Tube
Tube
Tube
Pb Free
Halogen Free
Pb Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
SDP02N65 SDF02N65
VDS Drain-Source Voltage
VGS Gate-Source Voltage
650
±30 ±30
ID
Drain Current-Continuous a
TC=25°C
TC=100°C
22
1.4 1.4
IDM -Pulsed a
5.9 5.9
EAS Single Pulse Avalanche Energy c
56
PD
Maximum Power Dissipation
TC=25°C
TC=100°C
75 25
37.5 12.5
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 175
Units
V
V
A
A
A
mJ
W
W
°C
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
2 6 °C/W
62.5 62.5 °C/W
Details are subject to change without notice.
1
Dec,24,2013
www.samhop.com.tw
1 Page SDP02N65
SDF02N65
3.0
VGS =10V
VGS =7V
2.4 VGS =6V
1.8
1.2
0.6 VGS =5V
0
0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
Ver 2.1
1.5
1.2
0.9
0.6
T j=125 C
0.3 25 C
-55 C
0
0 1.2 2.4 3.6 4.8 6.0 7.2
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
12
10
8
6 V GS =10V
4
2
0
0.01 0.6 1.2 1.8 2.4 3.0
ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
3.0
2.6
V G S =10V
2.2
ID=1A
1.8
1.4
1.0
0
0 25 50 75 100 125 150
Tj, Junction Temperature(° C ) T j( C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
V DS =V G S
ID=250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
3
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
Dec,24,2013
www.samhop.com.tw
3Pages SDP02N65
SDF02N65
Ver 2.1
Dec,24,2013
6 www.samhop.com.tw
6 Page | |||
ページ | 合計 : 11 ページ | ||
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PDF ダウンロード | [ SDP02N65 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
SDP02N65 | N-Channel Enhancement Mode Field Effect Transistor | SamHop Microelectronics |