(PDF) ACE2600B Datasheet - Dual N-Channel Enhancement Mode Field Effect Transistor

Número de pieza	ACE2600B
Descripción	Dual N-Channel Enhancement Mode Field Effect Transistor
Fabricantes	ACE Technology
Logotipo
Hay una vista previa y un enlace de descarga de ACE2600B (archivo pdf) en la parte inferior de esta página. Total 6 Páginas
No Preview Available ! ACE2600B Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Description The ACE2600B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch. It is ESD protected. Features  VDS(V)=20V  ID=6A (VGS=4.5V)  RDS(ON)＜22mΩ (VGS=4.5V)  RDS(ON)＜26mΩ (VGS=2.5V)  RDS(ON)＜34mΩ (VGS=1.8V)  ESD Protected: 2000V Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) * AC TA=25 OC TA=70 OC VDSS VGSS ID 20 V ±8 V 6 4.8 A Drain Current (Pulse) * B IDM 30 Power Dissipation TA=25 OC TA=70 OC PD 1.3 W 0.8 Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC Packaging Type SOT-23-6L VER 1.2 1 1 page ACE2600B Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Packing Information SOT-23-6L Units: mm VER 1.2 5 5 Page

Páginas	Total 6 Páginas
PDF Descargar	[ Datasheet ACE2600B.PDF ]

Número de pieza	Descripción	Fabricantes
SLA6805M	High Voltage 3 phase Motor Driver IC.	Sanken
SDC1742	12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.	Analog Devices

PDF ACE2600B Data sheet ( Hoja de datos )