DataSheet.jp

ACE2358M の電気的特性と機能

ACE2358MのメーカーはACE Technologyです、この部品の機能は「N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 ACE2358M
部品説明 N-Channel MOSFET
メーカ ACE Technology
ロゴ ACE Technology ロゴ 




このページの下部にプレビューとACE2358Mダウンロード(pdfファイル)リンクがあります。
Total 7 pages

No Preview Available !

ACE2358M Datasheet, ACE2358M PDF,ピン配置, 機能
ACE2358M
N-Channel 60-V MOSFET
Description
ACE2358M uses advanced trench technology to provide excellent RDS(ON).
This device particularly suits for low voltage application such as power management of desktop
computer or notebook computer power management, DC/DC converter.
Features
Low rDS(on) trench technology
Low thermal impedance
Fast switching speed
Applications
White LED boost converters
Automotive Systems
Industrial DC/DC Conversion Circuits
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Pulse Drain Current b
TA=25
TA=70
Continuous Source Current (Diode Conduction) a
Power Dissipation a
TA=25
TA=70
Operating Temperature / Storage Temperature
*1 Pw 10 μs, Duty cycle 1 %
*2 When mounted on a 1*0.75*0.062 inch glass epoxy board%
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ/TSTG
Limit
60
±20
3.1
2.5
1.5
1.9
1.3
0.8
-55/150
Units
V
V
A
A
A
W
OC
THERMAL RESISTANCE RATINGS
Parameter
Symbol Maximum
Maximum Junction-to-Ambient a
t <= 10 sec
Steady State
RθJA
100
166
Units
OC/W
VER 1.1 1

1 Page





ACE2358M pdf, ピン配列
ACE2358M
N-Channel 60-V MOSFET
Electrical Characteristics
(TA=25, unless otherwise specified)
Parameter
Gate-Source Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-Resistance a
Forward Transconductance a
Diode Forward Voltage a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
VGS(th)
VGS(th)
IDSS
ID(on)
rDS(on)
gfs
VSD
Qg
Qgs
Qgd
td(on)
tr
td(off)*
tf
Ciss
Coss
Crss
Conditions
Static
VDS = VGS, ID = 250 uA
VDS = 0 V, VGS = ±20 V
VDS = 48 V, VGS = 0 V
VDS = 48 V, VGS = 0 V, TJ = 55°C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 2.5 A
VGS = 4.5 V, ID = 2 A
VDS = 15 V, ID = 2.5 A
IS = 1 A, VGS = 0 V
Dynamic b
VDS = 30 V, VGS = 4.5 V, ID = 2.5 A
VDS = 30 V, RL = 12 Ω, ID = 2.5 A,
VGEN = 10 V, RGEN = 6 Ω
VDS = 15 V, VGS = 0 V, f = 1 MHz
Min. Typ. Max. Unit
1V
±100 uA
1
uA
25
5A
92
mΩ
107
10 S
0.74 V
4
1.0 nC
1.7
3
6
nS
17
5
330
31 pF
27
Notes
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
VER 1.1 3


3Pages


ACE2358M 電子部品, 半導体
Packing Information
SOT-23-3
ACE2358M
N-Channel 60-V MOSFET
SYMBOLS
A
A1
A2
B
C
D
E
E1
e
e1
L
L1
L2
R
Θ
Θ1
DIMENSIONS IN MILLIMETERS
MIN
NOM
MAX
0.935
0.95
1.10
0.01 0.10
0.85
0.90 0.925
0.30 0.40 0.50
0.10 0.15 0.25
2.70 2.90 3.10
2.60 2.80 3.00
1.40 1.60 1.80
0.95BSC
1.90BSC
0.30
0.40
0.60
0.60REF
0.25BSC
0.10
0° 4° 8°
7°NOM
Unit: mm
VER 1.1 6

6 Page



ページ 合計 : 7 ページ
 
PDF
ダウンロード
[ ACE2358M データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
ACE2358M

N-Channel MOSFET

ACE Technology
ACE Technology


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap