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ACE2358MのメーカーはACE Technologyです、この部品の機能は「N-Channel MOSFET」です。 |
部品番号 | ACE2358M |
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部品説明 | N-Channel MOSFET | ||
メーカ | ACE Technology | ||
ロゴ | |||
このページの下部にプレビューとACE2358Mダウンロード(pdfファイル)リンクがあります。 Total 7 pages
ACE2358M
N-Channel 60-V MOSFET
Description
ACE2358M uses advanced trench technology to provide excellent RDS(ON).
This device particularly suits for low voltage application such as power management of desktop
computer or notebook computer power management, DC/DC converter.
Features
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
Applications
• White LED boost converters
• Automotive Systems
• Industrial DC/DC Conversion Circuits
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Pulse Drain Current b
TA=25℃
TA=70℃
Continuous Source Current (Diode Conduction) a
Power Dissipation a
TA=25℃
TA=70℃
Operating Temperature / Storage Temperature
*1 Pw ≦10 μs, Duty cycle ≦1 %
*2 When mounted on a 1*0.75*0.062 inch glass epoxy board%
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ/TSTG
Limit
60
±20
3.1
2.5
1.5
1.9
1.3
0.8
-55/150
Units
V
V
A
A
A
W
OC
THERMAL RESISTANCE RATINGS
Parameter
Symbol Maximum
Maximum Junction-to-Ambient a
t <= 10 sec
Steady State
RθJA
100
166
Units
OC/W
VER 1.1 1
1 Page ACE2358M
N-Channel 60-V MOSFET
Electrical Characteristics
(TA=25℃, unless otherwise specified)
Parameter
Gate-Source Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-Resistance a
Forward Transconductance a
Diode Forward Voltage a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
VGS(th)
VGS(th)
IDSS
ID(on)
rDS(on)
gfs
VSD
Qg
Qgs
Qgd
td(on)
tr
td(off)*
tf
Ciss
Coss
Crss
Conditions
Static
VDS = VGS, ID = 250 uA
VDS = 0 V, VGS = ±20 V
VDS = 48 V, VGS = 0 V
VDS = 48 V, VGS = 0 V, TJ = 55°C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 2.5 A
VGS = 4.5 V, ID = 2 A
VDS = 15 V, ID = 2.5 A
IS = 1 A, VGS = 0 V
Dynamic b
VDS = 30 V, VGS = 4.5 V, ID = 2.5 A
VDS = 30 V, RL = 12 Ω, ID = 2.5 A,
VGEN = 10 V, RGEN = 6 Ω
VDS = 15 V, VGS = 0 V, f = 1 MHz
Min. Typ. Max. Unit
1V
±100 uA
1
uA
25
5A
92
mΩ
107
10 S
0.74 V
4
1.0 nC
1.7
3
6
nS
17
5
330
31 pF
27
Notes
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
VER 1.1 3
3Pages Packing Information
SOT-23-3
ACE2358M
N-Channel 60-V MOSFET
SYMBOLS
A
A1
A2
B
C
D
E
E1
e
e1
L
L1
L2
R
Θ
Θ1
DIMENSIONS IN MILLIMETERS
MIN
NOM
MAX
0.935
0.95
1.10
0.01 0.10
0.85
0.90 0.925
0.30 0.40 0.50
0.10 0.15 0.25
2.70 2.90 3.10
2.60 2.80 3.00
1.40 1.60 1.80
0.95BSC
1.90BSC
0.30
0.40
0.60
0.60REF
0.25BSC
0.10
0° 4° 8°
7°NOM
Unit: mm
VER 1.1 6
6 Page | |||
ページ | 合計 : 7 ページ | ||
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PDF ダウンロード | [ ACE2358M データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
ACE2358M | N-Channel MOSFET | ACE Technology |