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UGF1004GS の電気的特性と機能

UGF1004GSのメーカーはThinki Semiconductorです、この部品の機能は「10 Ampere Insulated Series Connection Ultra Fast Recovery Half Bridge Rectifiers」です。


製品の詳細 ( Datasheet PDF )

部品番号 UGF1004GS
部品説明 10 Ampere Insulated Series Connection Ultra Fast Recovery Half Bridge Rectifiers
メーカ Thinki Semiconductor
ロゴ Thinki Semiconductor ロゴ 




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UGF1004GS Datasheet, UGF1004GS PDF,ピン配置, 機能
UGF1004GS thru UGF1008GS
®
UGF1004GS thru UGF1008GS
Pb Free Plating Product
Pb
10 Ampere Insulated Series Connection Ultra Fast Recovery Half Bridge Rectifiers
Features
Latest GPP technology with ultra fast recovery time
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Inverters and Solar Inverters
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
ITO-220AB
Unit:mm
Mechanical Data
Case: Fully Insulated TO-220FP FullPak Plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.0 gram approximately
Case
Case
Case
Case
Positive
Negative
Doubler
Series Connection
Common Cathode Common Anode Tandem Polarity Tandem Polarity
Suffix "G"
Suffix "GA"
Suffix "GD"
Suffix "GS"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
PARAMETER
SYMBOL UGF1004GS UGF1005GS UGF1006GS UGF1007GS UGF1008GS UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 2)
IF= 5 A
Maximum reverse current @ rated VR TJ=25
TJ=125
Maximum reverse recovery time (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
VRRM
VRMS
VDC
IF(AV)
IFSM
VF
IR
Trr
RθJC
TJ
TSTG
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
200 300 400
140 210 280
200 300 400
10
70
0.95 1.25
20
- 55 to +175
- 55 to +175
10
100
6.0
500 600
350 420
500 600
1.70
25
- 55 to +150
- 55 to +150
V
V
V
A
A
V
μA
ns
oC/W
oC
oC
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com/

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共有リンク

Link :


部品番号部品説明メーカ
UGF1004G

Isolated Ultra Fast Rectifiers

Taiwan Semiconductor
Taiwan Semiconductor
UGF1004G

10 Ampere Insulated Common Cathode Ultra Fast Recovery Half Bridge Rectifiers

Thinki Semiconductor
Thinki Semiconductor
UGF1004G

Ultra Fast Rectifiers

JGD
JGD
UGF1004GD

10 Ampere Insulated Tandem Polarity Ultra Fast Recovery Half Bridge Rectifiers

Thinki Semiconductor
Thinki Semiconductor


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